Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-09T00:21:36.309Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermally Stable Schottky Contacts TO n-GaN

Published online by Cambridge University Press:  10 February 2011

H. S. Venugopalan  and
S. E. Mohney
H. S. Venugopalan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
S. E. Mohney
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

The barrier heights of Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The elemental Ni contacts were also investigated for comparison. The Ni/Ga/Ni and Re diodes were stable on short term annealing up to 700 °C. It was also shown that the Ni/Ga/Ni (84 at% Ni, 16 at% Ga) diodes were more stable than Ni diodes. This work provides the first demonstration of Schottky diodes to n-GaN that are stable upon annealing at 700 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 279
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ponce, F. A. and Bour, D. P., Nature, 386, 351 (1997).Google Scholar
2. Shur, M. S. and Khan, M. A., MRS Bull., 22, 44 (1997).Google Scholar
3. Khan, M. A., Kuznia, J. N., Bhattarai, A. R., and Olson, D. T., Appl. Phys. Lett., 62, 1786 (1993).Google Scholar
4. Pearton, S. J., Mat. Sci. Eng 4, (1997).Google Scholar
5. Schmitz, A. C., Ping, A. T., Khan, M. A., Chen, Q., Yang, J. W. and Adesida, I., Semicond. Sci. Tech., 11, 1464 ( 1996).Google Scholar
6. Mohney, S. E. and Lin, X., J. Electron. Mater., 25, 811 (1996).Google Scholar
7. Venugopalan, H. S., Mohney, S. E., Luther, B. P., Wolter, S. D., and Redwing, J. M., J. Appl. Phys., 82, 650 (1997).Google Scholar
8. Gasser, S. M., Nicolet, M. A., Kolawa, E., and Ruiz, R., Proc. of the Fourth International High Temperature Electronics Conference, in press.Google Scholar
9. Fomenko, V. S. and Samsonov, G. V., Handbook of Thermionic Properties (Plenum Press, New York, 1966), pp. 56–57.Google Scholar
10. Liu, Q. Z., Yu, L. S., Lau, S. S., Redwing, J. M., Perkins, N. R. and Kuech, T. F., Appl. Phys. Lett., 70, 1275 (1997).Google Scholar
11. Chen, Q., Wang, J. W., Osinsky, A., Gangopadhyay, S., Lim, B., Anwar, M. Z., and Khan, M. A., Appl. Phys. Lett., 70, 2277 (1997).Google Scholar
12. Rhoderick, E. H. and Williams, R. H., Metal Semiconductor Contacts (Oxford Science, Oxford, 1988), p. 99, p. 145.Google Scholar
13. Werner, J. H., Appl. Phys. A, 47, 291 (1988).Google Scholar
14. Duboz, J. Y., Binet, F., Laurent, N., Rosencher, E., Scholz, F., Harle, V., Briot, O., Gil, B., and Aulombard, R. L., Mat. Res. Soc. Symp. Proc., 449, 1085 (1996).Google Scholar
15. Werner, J. H. and Guttler, H. H., J. Appl. Phys., 69, 1522 (1991).Google Scholar