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Thermal Stress in Partially Separated GaAs Layers Grown Epitaxially on Si Substrates

Published online by Cambridge University Press:  25 February 2011

Naoki Wada ,
Shiro Sakai ,
Yoshihiro Ueta  and
Koji Kawasaki
Naoki Wada
Affiliation:
on leave from Matsushita Kotobuki Industries Ltd
Shiro Sakai
Affiliation:
Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, Tokushima 770, Japan
Yoshihiro Ueta
Affiliation:
Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, Tokushima 770, Japan
Koji Kawasaki
Affiliation:
Department of Electrical and Electronic Engineering, Tokushima University, Minami-josanjima, Tokushima 770, Japan
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Abstract

UCGAS (undercut GaAs on Si) structures in which a part of the GaAs layer is separated from the Si substrate are newly developed to reduce both the thermal stress and the defect density. The stress distribution in the fabricated structures is evaluated by photoluminescence. Quite a good agreement between the measured and the analyzed distributions is obtained, and the stress in UCGAS is less than 1/10of that in planar GaAs on Si. The EPD (etch pit density) in UCGAS after thermal cycle annealing is also less than 1/10of that in the planar layer. UCGAS-LED is fabricated for the first time and tested. The UCGAS-LED emits in 7 meV shorter wavelength and has longer lifetime compared to the mesa-type LED fabricated from the same wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 429
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1]Turner, G.W., Choi, H.K., Mattia, J.P., Chen, C.L., Eglash, S.J., and Tsaur, B-Y.,in Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices, edited by Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J. (Mater. Res. Soc. Proc. 116, Pittsburgh, PA, 1988) pp.179–192.Google Scholar
[2]Kamejima, T., Ishida, K. and Matsui, J., Jpn.J.Appl.Phys. 16, 233 (1977).Google Scholar
[3]Tachikawa, M. and Mori, H., Appl. Phys. Lett. 56, 2225 (1990).Google Scholar
[4]Sakai, S., Kawasaki, K. and Wada, N., Jpn. J. Appl. Phys. 29, L853 (1990).Google Scholar
[5]Sakai, S., Kawasaki, K. and Wada, N., Jpn. J. Appl. Phys. 29, 2077 (1990).Google Scholar
[6]Kawasaki, K., Sakai, S., Wada, N., and Shintani, Y., in Proceedings of the 17th Int. Symposium on Gallium Arsenide and Related Compounds, edited by Singer, K.E. (Inst. Phys. Conf. Ser. 112, Bristol, England, 1990) p.269.Google Scholar
[7]Zemon, S., Shastry, S.K., Norris, P., Jagannath, C., and Lambert, G., Solid State Commun. 58, 457 (1986).Google Scholar