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Thermal Stress in Doped Silicate Glasses (B,P) Deposited by PECVD and LPCVD

Published online by Cambridge University Press:  15 February 2011

H. Bouchard
Affiliation:
Groupe des Couches Minces, Department of Engineering Physics, École Polytechnique, C. P. 6079, Succ. A, Montréal, Québec, Canada, H3C 3A7
A. Azelmad
Affiliation:
Goal Electronics Inc. Waterloo, Ontario, Canada, N2L 6J7
J.F. Currie
Affiliation:
Groupe des Couches Minces, Department of Engineering Physics, École Polytechnique, C. P. 6079, Succ. A, Montréal, Québec, Canada, H3C 3A7
M. Meunier
Affiliation:
Groupe des Couches Minces, Department of Engineering Physics, École Polytechnique, C. P. 6079, Succ. A, Montréal, Québec, Canada, H3C 3A7
S. Blain
Affiliation:
Mitel S.C.C., 18 boul. de I'Aéroport, Bromont, Québec, Canada, J0I 1L0
T. Darwall
Affiliation:
Mitel S.C.C., 18 boul. de I'Aéroport, Bromont, Québec, Canada, J0I 1L0
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Abstract

Using an in situ stress measurement technique which measures stress as a function of annealing temperature, we have investigated the effect of phosphorous and boron doping of silicon dioxide glass films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). The stress at room temperature is σi. Upon heating, it increases to a maximum, σm, corresponding to a temperature Tm, above which the stress is reduced to zero at a temperature T0. All these parameters plus the expansion coefficient are dependent on dopant concentrations and deposition technique.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Singer, P. H., Semicon. Int., 1989.48.Google Scholar
2 Sunami, H., Itoh, Y. and Sato, K., J. of Appl. Phys., 41, 5115, (1970).Google Scholar
3 Mclnemey, E.J. and Flinn, P.A., Proc. IEEE/IRPS, 1982. 264.Google Scholar
4 Shioya, Y. and Maeda, M., J. Electrochem. Soc., 133, 1943, (1986).CrossRefGoogle Scholar
5 Bhushan, B., Murarka, S.P. and Gerlach, J., J. Vac. Sci. Technol. B, 8, 1068, (1990).Google Scholar
6 Shintan, A.i, Sugaki, S. and Nakashima, H., J. Appl. Phys., 51, 4197, (1980).Google Scholar
7 Taylor, J.A., J. Vac. Sci. Technol. A, 9, 2464, (1991).Google Scholar
8 Learn, A.J., J. Electrochem. Soc., 132, 405, (1985).Google Scholar
9 Gagnon, G., Azelmad, A., Currie, J.F., Brebner, J.L. and Gujrathi, S.C., 9e VMIC, Santa Clara, 1992. 459.Google Scholar
10 Bouchard, H., Azelmad, A., Currie, J.F. and Meunier, M., J. Can. Phys., 1992 (in press).Google Scholar