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Thermal Stability of Nickel Silicide Films

Published online by Cambridge University Press:  15 February 2011

S. R. Das ,
D.-X. XU ,
M. Nournia ,
L. Lebrun  and
A. Naem
S. R. Das
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
D.-X. XU
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
M. Nournia
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
L. Lebrun
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
A. Naem
Affiliation:
Northern Telecom Limited, 185 Corkstown Road, P.O. Box 3511, Station C, Ottawa, Ontario K 1Y 4H7, Canada
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Abstract

In view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 541
Copyright
Copyright © Materials Research Society 1996

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References

1. Ohguro, T., Nakamura, S., Koike, M., Morimoto, T., Nishiyama, A., Ushiku, Y., Yoshitomi, T., Ono, M., Saito, M., and Iwai, H., IEEE Trans. Elec. Dev. 41, 2305–2317 (1994).Google Scholar
2. Ohguro, T., Morimoto, T., Nishiyama, A., Ushiku, Y., and Iwai, H., Proc. of the 23rd European Solid State Device Research Conference (ESSDERC), Grenoble, Sept. 1993, pp. 481–484.Google Scholar
3. Lasky, J.B., Nakos, J.S., Cai, O.J., and Geiss, P.J., IEEE Trans. Elec. Dev. 38, 262–269 (1991).Google Scholar
4. Blair, C., Demirlioglu, E., Yoon, E., and Pierce, J., MRS Symp. Proc. 320, 53–58 (1994).Google Scholar
5. Das, S.R., Xu, D.-X., Phillips, J., McCaffrey, J., LeBrun, L., and Naem, A., MRS Symp. Proc. 318, 129–134 (1994).Google Scholar
6. Das, S.R., Nournia, M., Xu, D.-X. and Naem, A., presented at the 1995 MRS Spring Meeting, San Francisco, CA (unpublished).Google Scholar