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Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

Published online by Cambridge University Press:  25 February 2011

J. R. Phillips ,
P. Revesz ,
J. O. Olowolafe  and
J. W. Mayer
J. R. Phillips
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
P. Revesz
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
J. O. Olowolafe
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
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Abstract

The thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron-induced x-ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000°C. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650°C for 30min annealing. The Co silicide and Si layers are intermixed after 750°C 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900°C but is stable on polycrystalline silicon as high as 800°C. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 159
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Ting, C.Y., d’Heurle, F.M., Iyer, S.S., and Fryer, P.M., J. Electrochem. Soc. Abs. 85–1, 387 (1985).Google Scholar
2. Revesz, P., Zheng, L.R., Hung, L.S., and Mayer, J.W., Applied Phys. Lett. 48, 1591 (1986).CrossRefGoogle Scholar
3. Wong, C.Y., Wang, L.K., McFarland, P.A., and Ting, C.Y., J. Appl. Phys. 60, 243 (1986).CrossRefGoogle Scholar
4. Zheng, L.R., Hung, L.S., Feng, S.Q., Revesz, P., Mayer, J.W., and Miles, G., Appl. Phys. Lett. 48, 769 (1986).Google Scholar
5. Doolittle, L.R., Nucl. Instr. Meth. B9, 344 (1985).Google Scholar
6. Vaidya, S., Murarka, S.P., and Sheng, T.T., J. Appl. Phys. 58, 971 (1985).CrossRefGoogle Scholar
7. Murarka, S.P., Chang, C.C., and Adams, A.C., J. Vac. Sci. Technol. B5, 865 (1987).CrossRefGoogle Scholar
8. Lau, S.S., Mayer, J.W., and Tseng, W., in Handbook on Semiconductors, Vol. 3, ed. Keller, S.P., Ch.8, North-Holland, 1980.Google Scholar
9. Zheng, L.R., Phillips, J.R., Revesz, P., and Mayer, J.W., Nucl. Instru. Methods B 19/20, 598 (1987).CrossRefGoogle Scholar