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Thermal Stability of A1-Pt Thin Films/GaAs for Self-Aligning Gate Contacts

Published online by Cambridge University Press:  16 February 2011

G. D. Wilk ,
B. Blanpain ,
J. O. Olowolafe ,
J. W. Mayer  and
L. R. Zheng
G. D. Wilk
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
B. Blanpain
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
J. O. Olowolafe
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
L. R. Zheng
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650-2011
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Abstract

Several compositions of A1-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The A1 concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs selfaligning gate technology for compositions between AIPt and Al2Pt.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 231
Copyright
Copyright © Materials Research Society 1990

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References

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