Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T02:20:34.600Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stability and Electrical Properties of RhO2 Thin Films

Published online by Cambridge University Press:  17 March 2011

Yoshio Abe ,
Kiyohiko Kato ,
Midori Kawamura  and
Katsutaka Sasaki
Yoshio Abe
Affiliation:
Department of Materials Science, Kitami Institute of Technology 165 Koen-cho, Kitami 090-8507, Japan
Kiyohiko Kato
Affiliation:
Department of Materials Science, Kitami Institute of Technology 165 Koen-cho, Kitami 090-8507, Japan
Midori Kawamura
Affiliation:
Department of Materials Science, Kitami Institute of Technology 165 Koen-cho, Kitami 090-8507, Japan
Katsutaka Sasaki
Affiliation:
Department of Materials Science, Kitami Institute of Technology 165 Koen-cho, Kitami 090-8507, Japan
Get access

Abstract

RhO2 belongs to the family of conducting oxides with a rutile structure, which have attracted attention as capacitor electrode materials for memory devices. In this study, effects of thermal treatment under various oxygen pressures on structural and electrical properties of RhO2 thin films prepared by reactive sputtering were investigated. The RhO2 films were found to be stable up to 700°C under oxygen pressure of 1 atm and a metallic conduction property with a resistivity of about 80 μΩcm was obtained. However, the RhO2 films decomposed to semiconducting Rh2O3 at 750°C. The decomposition temperature decreased to 500°C under oxygen pressures of 0.5-5 mTorr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C5.7.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Maiwa, H., N, Ichinose, and Okazaki, K., Jpn. J. Appl. Phys. 33, 5223–5226 (1994).Google Scholar
2. Nakamura, T., Fujimori, Y., Izumi, N., and Kamisawa, A., Jpn. J. Appl. Phys. 37, 1325–1327 (1998).Google Scholar
3. Shannon, R. D., Solid State Commun. 6, 139–143 (1968).Google Scholar
4. Rogers, D. B., Shannon, R. D., Sleight, A. W., and Gillson, J. L., Inorganic. Chemistry 8, 841–849 (1969).Google Scholar
5. Onishi, S., Nagata, M., Mitarai, S., Ito, Y., Kudo, J., Sakiyama, K., Desu, S. B., Bhatt, H. D., Vijay, D. P. and Hwang, Y., J. Electrochem. Soc. 145, 2563–2568 (1998).Google Scholar
6. Kato, K., Abe, Y., Kawamura, M. and Sasaki, K., Jpn. J. Appl. Phys. 40, 2399–2402 (2001)Google Scholar
7. Ryden, W. D. and Lawson, A. W., Phys. Rev. B 1, 1494–1500 (1970).Google Scholar
8. Muller, O. and Roy, R., J. Less-Common Metals 16, 129–146 (1968).Google Scholar
9. Hiratani, M., Matusi, Y., Imagawa, K., and Kimura, S., Jpn. J. Appl. Phys. 38, L1275–L1277 (1999).Google Scholar
10. Cha, S. Y. and Lee, H. C., Jpn. J. Appl. Phys. 38, L–1128 (1999).Google Scholar
11. Aratani, M., Oikawa, T., Ozeki, T., and Funakubo, H., Appl. Phys. Lett. 79, 1000–1002 (2001).Google Scholar