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Thermal Nitridation of Silicon in Nitrogen Plasma and Nitrogen-Hydrogen Plasma

Published online by Cambridge University Press:  21 February 2011

S. Matsumoto ,
H. Nakamura ,
S. Eguchi ,
S. Fujita  and
A. Sasaki
S. Matsumoto
Affiliation:
Department of electrical engineering, Keio University, Hiyoshi, Yokohama, JAPAN 223
H. Nakamura
Affiliation:
Department of electrical engineering, Keio University, Hiyoshi, Yokohama, JAPAN 223
S. Eguchi
Affiliation:
Department of electrical engineering, Keio University, Hiyoshi, Yokohama, JAPAN 223
S. Fujita
Affiliation:
Department of electrical engineering, Kyoto University, Kyoto JAPAN 606
A. Sasaki
Affiliation:
Department of electrical engineering, Kyoto University, Kyoto JAPAN 606
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Abstract

Thermal nitridation of silicon in both nitrogen and nitrogen-hydrogen plasma has been performed around 1000°C for 5 min to 10 hr. From Auger electron spectroscopy analysis, the formed films contain some oxygen and are identified as oxynitride films in both cases. In nitrogen-hydrogen plasma, high nitrogen fraction( 0.8) in the film is obtained for the nitridation of 5 min. Thus, the addition of hydrogen to nitrogen enhances the nitrgen fraction in the film for such a short nitridation time. The film thickness is almost constant against the nitridation time and is limited to be about 40 Å. Capacitance-voltage characteristics of aluminum gate metal- nitride-semiconductor capacitors show stable behaviors and the fixed charge density at the film-substrate interface is estimated to be the order of 1012 cm−2 in both cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 461
Copyright
Copyright © Materials Research Society 1985

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