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Thermal Growth of He-cavities in Si Studied by Cascade Implantation

Published online by Cambridge University Press:  01 February 2011

E. Ntsoenzok ,
R. El Bouayadi ,
G. Regula ,
B. Pichaud  and
S. Ashok
E. Ntsoenzok
Affiliation:
CNRS/CERI, 3A rue de la Ferollerie 45071 Orléans, France
R. El Bouayadi
Affiliation:
TECSEN, case 151, Faculte des Sciences ST-Jerome, 13397 MARSEILLE, France
G. Regula
Affiliation:
TECSEN, case 151, Faculte des Sciences ST-Jerome, 13397 MARSEILLE, France
B. Pichaud
Affiliation:
TECSEN, case 151, Faculte des Sciences ST-Jerome, 13397 MARSEILLE, France
S. Ashok
Affiliation:
Department of Engineering Science and Mechanics, thePennsylvania State University, 212 Earth and Engineering Science Building, University Park, PA 16802, USA
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Abstract

Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2-1s. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.7
Copyright
Copyright © Materials Research Society 2005

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References

1] Corni, F., Calzlari, G., Frabboni, S., Nobili, C., Ottaviani, G., Tonini, R., J. Appl. Phys. 85 1401 (1999).Google Scholar
2] Liu, Changlong, Ntsoenzok, E., Delamare, R., Alquier, D., Regula, G., European J. Phys.: Appl. Phys. 23, 45 (2003).Google Scholar
3] Schroeder, H., Fichtner, P.F.P., Trinkaus, H., in “Fundamental Aspects of Inert Gases in Solids,” Donnelly, S.E. and Evans, J.H. (Eds), Plenum Press, New York, vol. 279 (1991).Google Scholar
4] Grisolia, J., Claverie, A., Assayag, G. ben, Godey, S., Ntsoenzok, E., Labhom, F., Veen, A. Van, J. Appl. Phys. 91, 9027 (2002).Google Scholar
5] Ntsoenzok, E., Delamare, R., Alquier, D., Liu, C.L., Ashok, S., Ruault, M.O., The Electrochemical Society, Proceeding, PV 2004-05, 2004.Google Scholar
6] Godey, S., Sauvage, T., Ntsoenzok, E., Erramli, H., Beaufort, M. F., Barbot, J. F., Leroy, B., J. Appl. Phys. 87, 2158 (2000).Google Scholar
[7] Raineri, V., Solid State Phenomena, 57-58, 43 (1997).Google Scholar
[8] Yankov, R.A., Kaschny, J.R., Fichtner, P.F.P., Mücklich, A., Kreissig, U., Skorupa, W., Microelectron. Engin. 36, 129 (1997).Google Scholar