Hostname: page-component-84b7d79bbc-g5fl4 Total loading time: 0 Render date: 2024-07-27T16:48:09.946Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Expansion Behavior of ZnSe and ZnS0.03Se0.97 Epilayers on GaAs at Temperatures in the Range, 25°C - 250°C

Published online by Cambridge University Press:  22 February 2011

J. R. Kim ,
R. M. Park  and
K. S. Jones
J. R. Kim
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. M. Park
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

The thermal expansion behavior of ZnSe and ZnS0.03Se0.97 epilayers grown on GaAs has been investigated using high resolution X-ray diffraction at temperatures between room temperature and the growth temperature. The lattice parameters perpendicular and parallel to the surface were measured with the Bond's method. The lattice mismatch for a partially relaxed ZnSe layer was Δa(⊥)/a =2300 ppm and Δa(‖)/a = 2600 ppm at room temperature(R.T.) and Δa (⊥)/a =3600 ppm and Δa(‖)/a =2400 ppm at 250°C. For ZnS0.03Se0.97 which is almost lattice matched at R.T. to GaAs, Δa(⊥)/a =200 ppm, Δa(⊥)/a =20ppmatR.T. and Δa(⊥)/a =1400ppm, Δa(⊥)/a =50ppm at 250°C. The relaxed lattice constants were evaluated and the thermal expansion coefficients of relaxed ZnSe layers were found to vary from 7.8*10−6/°C at room temperature to 12.2*10−6/°C at 250°C and for ZnS0.03Se0.97 layers the variation was from 7.5*10−6/°C at R.T. to 11.7*10−6/°C at 250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 475
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hasse, M.A., Qiu, J., DePuydt, J.M. and Cheng, H., Appl.Phys. Lett. 59, 1271(1991)Google Scholar
2. Jeon, H., Ding, J., Patterson, W., Nurmikko, A.V., Xie, W., Grillo, D.C., Kobayashi, M., and Gunshor, R.L., Appl.Phys.Lett. 59, 3629(1991)Google Scholar
3. Okuyama, H., Miyajima, T., Morinaga, Y., Hiei, F., Ozawa, M. and Akimoto, K., Electron Lett. 28, 1978 (1992)Google Scholar
4. Gaines, J.M., Drenten, R.R., Haberern, K.W., Marshall, T., Mensz, P., and Petruzello, J., Appl.Phys.Lett. 62, 2462(1993)Google Scholar
5. Park, R.M., Troffer, M.B., Rouleau, C.M., DePuydt, J.M. amd Hasse, M.A., Appl.Phys.Lett. 57,2127 (1990)Google Scholar
6. Bond, W.L., Acta. Cryst. 13, 814 (1960)Google Scholar
7. Bartels, W.J., J.Vac.Sci.Technol. B1(2), 338, (1983)Google Scholar
8. Sluis, P van der, J.Phys. D: Appl.Phys. 26, A188 (1993)Google Scholar
9. Bak-Misiuk, J., Wolf, J., and Pietsch, U., Phys. Stat. Sol.(a), 118, 209 (1990)Google Scholar
10. Leszczynski, M., Kulik, A., Ciepielewski, P., Phys. Stat. Sol.(a), 119, 495 (1990)Google Scholar
11. Numerical Data and Functional Relationships in Science and Technology, Vol 17.b, edited by Hellwege, K.H., Springer-Verlag Berlin-Heidelberg (1982)Google Scholar
12. Adachi, S., J. Appl.Phys. 58(3), R1, (1985)Google Scholar
13. Pietsch, U., Defects in Crystals, CzCzyrk, 1985, edited by Mizera, E. (World Scientific, Singapore, 1987)Google Scholar
14. Tonami, Y., Nishino, T., Jhamakawa, Y., Sakamoto, T. and Fujita, S., Jpn. J.Appl.Phys. 27(4), L506,(1988)Google Scholar