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Thermal Emission and Vertical-Transport Studies in III/V Semiconductor Multi-Quantum-Well Structures

  • S. Weber (a1), W. Limmer (a1), K. Thonke (a1), R. Sauer (a1), T. Sauer (a1), D. Geiger (a1), H. Meyer (a2) and K. Panzlaff (a3)...


For the thermal quenching of quantum well (QW) photoluminescence (PL) controversal de-activation energies have been reported. Values range from the total exciton (or electron-hole) binding energy Ex to half of Ex or to the binding energy of the shallower bound particle. We resolve this controversy by performing steady-state measurements both under high and extremely low (Iex≈l μW/mm2) excitation conditions on a series of multiple QW structures of the material systems InxGa1-xAs/GaAs and GaAs/AlyGa1-yAs. For high and low excitation, we find that the final de-activation step is associated with Ex. In an intermediate temperature range, the first decade of PL quenching is governed by a de-activation energy close to the binding energy of the shallower bound particle.

Also performed were temperature dependent photoluminescence excitation (PLE) measurements under high injection in InxGa1-xAs/GaAs double QWs with additional AlyGa1-yAs cladding barriers. Vertical transport between the QWs is observed and the underlying de-activation energies are found to be equal to the total exciton binding energies Ex We discuss our findings in the frame of a simple model for the thermalization of electrons and holes.



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