Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-02T06:42:19.725Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Effects of Gasses in Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

K. L. Knutson ,
S. A. Campbell  and
J. D. Leighton
K. L. Knutson
Affiliation:
Department of Electrical Engineering, University of Minnesota200 Union Street Minneapolis Minnesota 55455
S. A. Campbell
Affiliation:
Department of Electrical Engineering, University of Minnesota200 Union Street Minneapolis Minnesota 55455
J. D. Leighton
Affiliation:
Department of Electrical Engineering, University of Minnesota200 Union Street Minneapolis Minnesota 55455
Get access

Abstract

A numerical model has been created for a Rapid Thermal Processing (RTP) system. Experiments have been done to show the validity of the model. The simulations done examine thermal uniformity and stresses incurred by RTP during steady state operation and during short time temperature ramps. It is shown that increasing the radiant intensity at the edge of the wafer reduces stress, compared to a uniform radiant field, in steadystate operation but increases stress during short time temperature ramps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 203
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lord, H.A., "Thermal and Stress Analysis of Semiconductor Wafers in a Rapid Thermal Processing Oven,” IEEE Trans. on Semicond. Manufac., Vol. 1, No. 3, Aug 1988.Google Scholar
2. Young, G.L., McDonald, K.A., “Effect of Radiation Shield Angle on Temperature and Stress Profiles During Rapid Thermal Annealing,” IEEE Trans. on Semicond. Manufac., Vol.3, No. 4, Nov 1990.CrossRefGoogle Scholar
3. Campbell, S.A. et al. , “Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber,” IEEE Trans. on Semicond. Manufac. Vol. 4, No. 1, February, 1991.CrossRefGoogle Scholar
4. Numerical Heat Transfer and Fluid Flow, Patankar, Suhas V., Hemisphere Publishing Corporation, New York, 1980. pgs. 131–134.Google Scholar
5. Radiation Heat Transfer, Sparrow, E. M., Cess, R. D., Hemisphere Publishing Corporation, New York, 1978, pgs. 106–107.Google Scholar