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Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al0.3Ga0.7As Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

H.S. Gingrich ,
C. Morath ,
M.O. Manasreh ,
P. Ballet ,
J.B. Smathers ,
G. J. Salamo  and
C. Jagadish
H.S. Gingrich
Affiliation:
Air Force Research Laboratory (AFRL/VSSS), 3550 Aberdeen Ave., SE, Kirtland AFB, NM 87117-5776, gingrichaplk@af.mil
C. Morath
Affiliation:
Air Force Research Laboratory (AFRL/VSSS), 3550 Aberdeen Ave., SE, Kirtland AFB, NM 87117-5776
M.O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131
P. Ballet
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR
J.B. Smathers
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR
G. J. Salamo
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
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Abstract

Optical absorption spectra of intersubband transitions in heavily proton irradiated n-type GaAs/AlGaAs multiple quantum wells were studied as a function of isochronal and isothermal annealing. The absorption spectra of intersubband transitions were depleted in samples irradiated with 1MeV proton doses higher than 1.0 × 1014 cm−2. Thermal annealing of the irradiated samples show that the intersubband transitions are recovered. The relatively lower annealing temperatures at which the recovery is observed indicate that the irradiation-induced defects that trapped the two-dimensional electron gas in the quantum wells are vacancy and interstitial related defects. Once these traps are thermally annealed the electrons are released back to the quantum wells, resulting in the recovery of the intersubband transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 217
Copyright
Copyright © Materials Research Society 2000

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References

1. Levine, B. F., “Quantum-well infrared photodetectors,” J. Appl. Phys. 74, R1 (1993).Google Scholar
2. Semiconductor Quantum Wells and Superlattices for Long Wavelength Infrared Detectors, edited by Manasreh, M. O. (Artech House, Boston, 1993).Google Scholar
3. Paxton, A. H., Winter, J. E., Sanchez, A. D. and Craig, D. M., “A Survey of Radiation Effects in Semiconductor Lasers,” American Institute of Aeronautics and Astronautics Space Technology Conference and Exposition, 28-30 September 1999, paper AIAA-99-4574.Google Scholar
4. Tan, H. H. and Jagadish, C., “Wavelength shifting in GaAs quantum well lasers by proton irradiation,” Appl. Phys. Lett. 71, 2680 (1997).Google Scholar
5. Tan, H. H., Jagadish, C., Williams, J. S., Zou, J., Cockayne, D. J. H. and Sikorski, A., “Ion damage buildup and amorphization processes in AlxGa1−xAs,” J. Appl. Phys. 77, 87 (1995).Google Scholar
6. Turkot, B. A., Forbes, D. V., Robertson, I. M., Coleman, J. J., Rehn, L. E., Kirk, M. A. and Baldo, P. M., “Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures,” J. Appl. Phys. 78, 97 (1995).Google Scholar
7. Lagow, B. W., Turkot, B. A., Robertson, I. M., Coleman, J. J., Roh, S. D., Forbes, D. V., Rehn, L. E. and Baldo, P. M., “Ion Implantation in AlxGa1−xAs: Damage Structures and Amorphization Mechanisms,” IEEE J. Select. Topics Quantum Electron. 4, 606 (1998).Google Scholar
8. Manasreh, M. O., Ballet, P., Smathers, J. B., Salamo, G. J. and Jagadish, C., “Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers,” Appl. Phys. Lett. 75, 525 (1999).Google Scholar
9. Johnston, M. B., Gal, M., Li, N., Chen, Z., Liu, X., Li, N., Lu, W., Shen, S. C., Fu, L., Tan, H. H. and Jagadish, C., “Interdiffused quantum-well infrared photodetectors for color sensitive arrays,” Appl. Phys. Lett. 75, 923 (1999).Google Scholar
10. Lee, A. S. and Li, E. H., “Effect of interdiffusion of quantum well infrared photodetector,” Appl. Phys. Lett. 69, 3581 (1996).Google Scholar