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Thermal Annealing of Radiation-Induced Trapped Charge in Simox and Thermal Oxide Thin Films

Published online by Cambridge University Press:  22 February 2011

D. Herve ,
Ph. Paillet  and
J. L. Leray
D. Herve
Affiliation:
Commissariat à L'Energie Atomique, B.P. 12, 91680 Bruyéres-Le-Châtel, France.
Ph. Paillet
Affiliation:
Commissariat à L'Energie Atomique, B.P. 12, 91680 Bruyéres-Le-Châtel, France.
J. L. Leray
Affiliation:
Commissariat à L'Energie Atomique, B.P. 12, 91680 Bruyéres-Le-Châtel, France.
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Abstract

The results of charge trapping and thermal annealing in X-ray irradiated SiO2 are presented. A comparative study is made between thermal oxide and SIMOX buried oxide behavior. At low dose (10 krad(SiO2)), X-ray induced charge trapping is found to be very different in thermal and SIMOX oxides. Results are interpreted in terms of a relatively large bulk trapping in SIMOX whereas thermal oxide behavior is dominatedby interface trapping. However, at high dose, both oxides behave similarly and are dominated by interface trapping. Etch-back experiments performed on SIMOX irradiated at 10krad (SiO2) and 1 Mrad (SiO2) reveal these two trapping regimes. Isochronal annealings have been performed up to 300°C on irradiated samples. Recovery data are interpreted assuming an energy distribution of trapped charge densities. Detrapping energies located at about 1.05 eV and 1.35 eV have been obtained in SIMOX whereas the thermal oxide exhibits a unique peak at 1.35 eV. Based on these data, SIMOX and thermal oxides are demonstrated to differ significantly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 287
Copyright
Copyright © Materials Research Society 1993

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References

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