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Thermal Annealing Effect on P3HT:PCBM Free Polarons Lifetime and Charge Transport

Published online by Cambridge University Press:  22 August 2011

Kejia Li
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, U.S.A
Yang Shen
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, U.S.A
Lijun Li
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, U.S.A
Petr Khlyabich
Affiliation:
Department of Chemistry, University of Southern California, 837 Bloom Walk, Los Angeles, CA 90089, U.S.A
Ellen S. Reifler
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, U.S.A
Barry C. Thompson
Affiliation:
Department of Chemistry, University of Southern California, 837 Bloom Walk, Los Angeles, CA 90089, U.S.A
Joe C. Campbell
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, U.S.A
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Abstract

A transient response technique has been employed to investigate the lifetime of free polarons in bulk heterojunction blends of regioregular poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methylester (PCBM) at different annealing temperatures. Device efficiency and charge mobility were also measured. The longest lifetime, ∼ 1.5 microseceonds, was achieved for an annealing temperature of 140˚C; this represents a 2.5 x increase in lifetime relative to unannealed samples. The 140˚C annealing temperature also yields the highest efficiency. These measurements provide an estimate of the mobility-lifetime product, a figure of merit for charge transport in organic bulk heterojunctions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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