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Thermal And Optical Admittance Spectroscopy Studies Of Defects In 15r-Sic

Published online by Cambridge University Press:  15 February 2011

S. R. Smith ,
A. O. Evwaraye  and
W. C. Mitchel
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, OH 45469–0178.
A. O. Evwaraye
Affiliation:
University of Dayton, Department of Physics, 300 College Park, Dayton, OH 45469–2314.
W. C. Mitchel
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLPO, 3005 P St., Wright-Patterson AFB, Ohio 45433–7707
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Abstract

Nitrogen is the common n-type dopant of the various polytypes of silicon carbide. The nitrogen levels in 4H-SiC (at EC-53 meV and EC-100 meV) and in 6H-SiC (at EC-89 meV, EC- 100 meV, and EC-125 meV) have been studied in detail by temperature dependent Hall effect measurements, electron spin resonance (ESR), and thermal admittance spectroscopy. Until now, such detailed studies of the nitrogen levels in 15R-SiC have not been carried out.

Lely-grown 15R samples were used in these studies. The net carrier concentrations (ND-NA), determined by room temperature CV measurements, ranged from 1 × 1018 to 3 × 1018 cm−3. The nitrogen levels in 15R-SiC were studied using thermal admittance spectroscopy. Optical admittance spectroscopy (OAdS) was used to study the deeper defects in this polytype. It was found that optical transitions to the conduction band were inhibited in the heavily doped material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 705
Copyright
Copyright © Materials Research Society 1996

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References

1. “Proceedings of the Fifth Conference on Silicon Carbide and Related Materials,” eds. Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. Asif, and Rahman, M., Inst. Phys. Conf. Ser. 137 (1994).Google Scholar
2. Uddin, A. and Uemoto, T., Jpn. J. Appl. Phys. 32, L1670 (1993).Google Scholar
3. Uddin, A., Mitsuhara, H., and Uemoto, T., Jpn. J. Appl. Phys. 33, L908 (1994).Google Scholar
4. Jang, S., Kimoto, T. and Matsunami, H., Appl. Phys. Lett. 65, 581 (1994).Google Scholar
5. Evwaraye, A.O., Smith, S.R., and Mitchel, W.C., J. Appl. Phys. 76, 5769 (1994).Google Scholar
6. Choyke, W. and Linkov, I., “Proceedings of the Fifth Conference on Silicon Carbide and Related Materials,” eds. Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. Asif, and Rahman, M., Inst. Phys. Conf. Ser. 137 (1994), pg. 141.Google Scholar
7. Schneider, J. and Maier, K., Physica B, 185, 199 (1993).Google Scholar
8. Hobgood, H. McD., Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M. Mitchel, W. C., and Roth, M., Appl. Phys. Lett. 66, 1364 (1995).Google Scholar
9. Evwaraye, A.O., Smith, S.R., and Mitchel, W.C., J. Appl. Phys. 74, 5269 (1993)Google Scholar
10. Blood, P. and Orton, J. W., The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic Press, London, 1992).Google Scholar
11. Evwaraye, A.O., Smith, S.R., and Mitchel, W.C., J. Appl. Phys. 75, 3472 (1994)Google Scholar
12. Raynaud, C., Ducroquet, F., Guillot, G., Porter, L. M., and Davis, R. F., J. Appl. Phys. 76, 1956 (1994)Google Scholar
13. Evwaraye, A.G., Smith, S.R., and W.C. Mitchel (unpublished).Google Scholar
14. Evwaraye, A.G., Smith, S.R., and Mitchel, W.C., Mater. Res. Soc. Symp. Proc. 325, 353 (1994)Google Scholar
15. Evwaraye, A.O., Smith, S.R., and Mitchel, W.C., Mater. Res. Soc. Symp. Proc. 339, 353 (1994)Google Scholar
16. Mitchel, W.C., Roth, Matthew, Smith, S.R., Evwaraye, A.O., and Solomon, J., Inst. Phys. Conf. Ser. No. 141: Chapter 4, p. 411,1995 Google Scholar
17. Stiasny, Th., Helbig, R., and Stein, R.A., Amorphous and Crystalline Silicon Carbide IV, Springer Proceedings in Physics 71, edited by Yang, C.Y., Rahman, M.M., and Harris, G.L. (Springer, Berlin, 1992)Google Scholar
18. Evwaraye, A.G., Smith, S.R., and Mitchel, W.C., J. Appl. Phys. 77, 4477 (1995)Google Scholar
19. Evwaraye, A.O., Smith, S.R., and Mitchel, W.C., Appl. Phys. Lett. 66, 2691 (1995)Google Scholar