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Thermal and Chemical Instability Between Iridium Gate Electrode and Ta205 Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

A. Y. Mao ,
Y. M. Sun ,
J. M. White  and
D. L. Kwong
A. Y. Mao
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
Y. M. Sun
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
J. M. White
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
D. L. Kwong
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712dlkwong@mail.utexas.edu
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Abstract

The thermal and chemical stability of thin CVD iridium films deposited on thin CVD tantalum pentoxide (Ta2O5) films on Si(100) have been investigated by means of in-situ X-ray Photoelectron Spectroscopy (XPS) and ex-situ Angle Resolved XPS (ARXPS). It was found that upon annealing in vacuum at 800 °C for more than 1 min, tantalum oxide at the Ir-Ta2O5 interface was decomposed and formed metallic tantalum which diffused through Ir, while changes in iridium film itself were negligible. When annealed at 750 °C within 15 minutes, intermediate partially oxidized Ta was formed and coexisted with metallic and oxidized Ta. A portion of metallic Ta near Ir-vacuum interface was subsequently oxidized when the films were exposed in air.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 489
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

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