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Theory of Rare-Earth Impurities in Semiconductors

Published online by Cambridge University Press:  22 February 2011

C. Delerue  and
M. Lannoo
C. Delerue
Affiliation:
Institut d'Electronique et de Microélectronique du Nord U.M.R. C.N.R.S. 9929 Département Institut Supérieur d'Electronique du Nord 41 boulevard Vauban, 59046 Lille CEDEX, France
M. Lannoo
Affiliation:
Institut d'Electronique et de Microélectronique du Nord U.M.R. C.N.R.S. 9929 Département Institut Supérieur d'Electronique du Nord 41 boulevard Vauban, 59046 Lille CEDEX, France
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Extract

The theory of rare-earth impurities in semiconductors is reviewed. Results of Green's function calculations are presented. The particular case of Ytterbium (Yb) in InP is analyzed in detail. We show that the optical transitions of Yb in InP and their Zeeman splitting can be interpreted by a small coupling between quasi degenerate 5d and 4f states. It also explains the observed lifetimes. This model is coherent with the attribution of the Ec-30 meV level to the Yb3+/Yb2+ acceptor level as proposed recently. We detail the mechanism which allows the energy transfer between a free exciton and the rare-earth impurity. The conditions required for an efficient luminescence are analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 317
Copyright
Copyright © Materials Research Society 1994

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