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Theory of Gain in Group-HI Nitride Lasers

Published online by Cambridge University Press:  10 February 2011

W. W. Chow ,
A. F. Wright ,
A. Girndt ,
F. Jahnke  and
S. W. Koch
W. W. Chow
Affiliation:
Sandia National Laboratories, Albuquerque, NM 85718–0601, U. S. A., wwchow@sandia.gov
A. F. Wright
Affiliation:
Sandia National Laboratories, Albuquerque, NM 85718–0601, U. S. A.
A. Girndt
Affiliation:
Department of Physics, Philipps University, Renthof 5, 35032 Marburg, Germany
F. Jahnke
Affiliation:
Department of Physics, Philipps University, Renthof 5, 35032 Marburg, Germany
S. W. Koch
Affiliation:
Department of Physics, Philipps University, Renthof 5, 35032 Marburg, Germany
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Abstract

A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 487
Copyright
Copyright © Materials Research Society 1997

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References

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