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A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots

Published online by Cambridge University Press:  21 March 2011

Yih-Yin Lin ,
Hongtao Jiang  and
Jasprit Singh
Yih-Yin Lin
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
Hongtao Jiang
Affiliation:
Broadcom Corporation, Irvine, CA 92618
Jasprit Singh
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

The past few years have seen considerable efforts in growth and device application of self-assembled quantum dots. However, the photoluminescence (PL) linewidth, which represents structural fluctuations in dot sizes, is still in the range of 30-50 meV. This large linewidth has deleterious effects on devices such as lasers based on self-assembled dots. In this paper we will examine the configuration-energy diagram of self-assembled dots. Our formalism is based on: (1) an atomistic Monte Carlo method which allows us to find the minimum energy configuration and strain tensors as well as intermediate configurations of dots; (2) an 8-band k p method to calculate the electronic spectra. We present results on the strain energy per unit cell for various distributions of InAs/GaAs quantum dots and relate them to published experimental results. In particular we examine uncovered InAs/GaAs dots and show that in the uncovered state a well-defined minimum exists in the configuration energy plot. The minimum corresponds to the size that agrees well with experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 707: Symposium AA – Self-Assemble Processes in Materials , 2001 , H3.4.1
Copyright
Copyright © Materials Research Society 2002

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References

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