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Theoretical Investigation of Implanted Dopant Diffusion From a Silicide Layer to the Silicon Wafer for Ultra Shallow P-N Junction Formation

Published online by Cambridge University Press:  15 February 2011

M. Sinder  and
J. Pelleg
M. Sinder
Affiliation:
Ben - Gurion University of the Negev, Department of Materials Engineering, Beer Sheva, 84105, Israel.
J. Pelleg
Affiliation:
Ben - Gurion University of the Negev, Department of Materials Engineering, Beer Sheva, 84105, Israel.
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Abstract

In this work a theoretical model is presented to analyze the technique recently suggested to form shallow p-n junction. According to this technique a silicide acts as a source of a dopant and it is followed by controlled diffusion anneal to accomplish the dopant penetration into a silicon wafer.

In our analysis the dependence of the p-n junction depth on process parameters is discussed. The model considers two cases, namely, with and without dopant evaporation.

Experimental data for B diffusion from CoSi2 acting as the source are used to evaluate our theoretical model. The agreement between theoretical and experimental results is satisfactory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 233
Copyright
Copyright © Materials Research Society 1995

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References

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