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Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

  • Leonardo Miotti (a1), Karen Paz Bastos (a2), Cláudio Radtke (a3) and Gerald Lucovsky (a4)

Abstract

The stabilization of the tetragonal phase of 5 nm thick HfO2 films by Ge doping is investigated using x-ray absorption spectroscopy around O and Ge Kedges and by Rutherford backscattering spectrometry. We show that Ge concentrations higher than ˜5at.% are not stable during rapid thermal anneal at temperatures as low as 750°C and that the tetragonal phase of HfO2 is achieved at this Ge concentration.

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