Skip to main content Accessibility help

Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

  • Leonardo Miotti (a1), Karen Paz Bastos (a2), Cláudio Radtke (a3) and Gerald Lucovsky (a4)


The stabilization of the tetragonal phase of 5 nm thick HfO2 films by Ge doping is investigated using x-ray absorption spectroscopy around O and Ge Kedges and by Rutherford backscattering spectrometry. We show that Ge concentrations higher than ˜5at.% are not stable during rapid thermal anneal at temperatures as low as 750°C and that the tetragonal phase of HfO2 is achieved at this Ge concentration.



Hide All
1 Wang, J., Li, H. P., and Stevens, R., J. Mat. Sci. 27, 5397 (1992).10.1007/BF00541601
2 Zhao, X. and Vanderbilt, D., Phys. Rev. B 65, 233106 (2002).10.1103/PhysRevB.65.233106
3 Tomida, K., Kita, K., and Toriumi, A., Appl. Phys. Lett. 89, 142902 (2006).10.1063/1.2355471
4 Shandalov, M. and McIntyre, P. C., J. Appl. Phys. 106, 084322 (2009).10.1063/1.3243077
5 Lee, C.-K., Cho, E., Lee, H.-S., Hwang, C. S., and Han, S., Phys. Rev. B 78, 012102 (2008).10.1103/PhysRevB.78.012102
6 Lim, P., Chen, I-W., and Penner-Hahn, J. E., J. Am. Ceram. Soc. 77, 1281 (1994).
7 Lucovsky, G., Lee, S., Long, J.P., Seo, H., and Lüning, J., Micro. Electr. 86, 224 (2009).
8 Teo, B.-T., J. Am. Chem. Soc. 103, 3990 (1981).10.1021/ja00404a005
9 Stör, J., NEXAS Spectroscopy (Springer, Berlin, 1992).10.1007/978-3-662-02853-7
10 Prabhakaran, K., Maeda, F., Watanabe, Y. 11. and Ogino, T., Appl. Phys. Lett. 76, 2244 (2000).10.1063/1.126309



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed