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Ternary Group-III-Nitrides Grown in Movpe Production Reactors

  • O. Schoen (a1), H. Protzmann (a1), M. Schwambera (a2), B. Schineller (a2), M. Heuken (a2), D. Schmitz (a1), G. Strauch (a1) and H. Juergensen (a1)...

Abstract

Using production scale AIXTRON MOCVD systems various heterointerfaces in the GaInN/GaN system have been studied in depth. GaInN single hetero layers were investigated to optimise photoluminescence properties. Several approaches of capping GaInN/GaN with another GaN layer to develop high quality double-hetero (DH) structures were presented. Using an optimised interfacing technique we obtain device quality DH structures with state of the art composition uniformity across a 2 inch wafer

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1. Dauelsberg, M., Kadinski, L., Makarov, Yu. N., Woelk, E., Strauch, G., Schmitz, D., Juergensen, H., Inst. Phys. Ser. No. 142: Chapter 12 (1996) 887890
2. Schulte, F., Strauch, G., Juergensen, H., Niemann, E., Leidich, D., Transactions 2nd Int. High Temp. Elec. Conf., Charlotte, June 1994, Vol. 1 (1994) X3
3. Eichel-Streiber, C. v., Schoen, O., Beccard, R., Schmitz, D., Heuken, M., Juergensen, H., to be published in J. of Cryst. Growth, Special Issue ICNS '97
4. Beccard, R., Schoen, O., Wachtendorf, B., Schmitz, D., Juergensen, H., Woelk, E., to be published in J. of Elec. Mats., Special Edition OMVPE Dana Point, Apr. 13.-17. '97

Ternary Group-III-Nitrides Grown in Movpe Production Reactors

  • O. Schoen (a1), H. Protzmann (a1), M. Schwambera (a2), B. Schineller (a2), M. Heuken (a2), D. Schmitz (a1), G. Strauch (a1) and H. Juergensen (a1)...

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