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Terahertz-Emitting Silicon-Germanium Devices

Published online by Cambridge University Press:  11 February 2011

Ralph T. Troeger ,
Thomas N. Adam ,
Samit K. Ray ,
Pengcheng Lv ,
Ulrike Lehmann  and
James Kolodzey
Ralph T. Troeger
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, U.S.A.
Thomas N. Adam
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, U.S.A.
Samit K. Ray
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, U.S.A.
Pengcheng Lv
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, U.S.A.
Ulrike Lehmann
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, U.S.A.
James Kolodzey
Affiliation:
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, U.S.A.
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Abstract

In this paper we report on far-infrared emission in the 1–12 THz frequency range from strained SiGe structures. Pseudomorphic superlattices were grown by Molecular Beam Epitaxy (MBE) at the relatively low substrate temperature of 400°C to prevent germanium segregation. Layer thicknesses, composition, and crystallinity were confirmed by high-resolution X-ray diffraction. Devices were designed to produce confined hole states with various energy separations. Mesa devices were etched in a reactive-ion etching system and tested for edge emission over a wide range of drive currents using an FTIR spectrometer in step-scan mode. THz emission was observed in pulsed mode at current densities as low as 50 A/cm2 and at temperatures as high as 50 K, using a liquid-helium-cooled silicon bolometer detector with a lock-in amplifier. Emission spectral peaks occurred at 7.9 and 9.36 THz for two different samples, in good agreement with k·p calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M2.4
Copyright
Copyright © Materials Research Society 2003

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References

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