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A Tentative Identification of the Nature of {113} Stacking Faults in Si – Model and Experiment

Published online by Cambridge University Press:  15 February 2011

T.Y. Tan ,
H. Foell ,
S. Mader  and
W. Krakow
T.Y. Tan
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y., 10598
H. Foell
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y., 10598
S. Mader
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y., 10598 IBM Data Systems Division, Hopewell Junction, N.Y., 12533
W. Krakow
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y., 10598
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Abstract

An atomic model with fully bonded interstitial atoms is proposed for the {113} stacking faults (SF). It is shown that the development of the {113} habit plane is a result of minimizing bond length changes. The fault may be represented by a partial dislocation and a partial will facilitate an unfaulting reaction to result in a edge dislocation. Lattice images were obtained for a {113} SF which showed that the model is essentially correct.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 179
Copyright
Copyright © Materials Research Society 1981

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References

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