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Temperature-Dependent Photoluminescence of Silicon Nanocrystallites Prepared by Inert-Gas-Ambient Pulsed Laser Ablation

Published online by Cambridge University Press:  10 February 2011

I. Umezu ,
S. Yamaguchi ,
K. Shibata ,
A. Sugimura ,
Y. Yamada  and
T. Yoshida
I. Umezu
Affiliation:
Department of Applied Physics, Konan University, Higashinada Kobe, 658, Japan
S. Yamaguchi
Affiliation:
Department of Applied Physics, Konan University, Higashinada Kobe, 658, Japan
K. Shibata
Affiliation:
Department of Applied Physics, Konan University, Higashinada Kobe, 658, Japan
A. Sugimura
Affiliation:
Department of Applied Physics, Konan University, Higashinada Kobe, 658, Japan
Y. Yamada
Affiliation:
Matsushita Research Institute Tokyo, Inc., 3-10-1 Higashimita, Tama-ku, Kawasaki 214, Japan
T. Yoshida
Affiliation:
Matsushita Research Institute Tokyo, Inc., 3-10-1 Higashimita, Tama-ku, Kawasaki 214, Japan
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Abstract

The inert-gas-ambient pulsed laser ablation technique is a promising method for preparing Si nanocrystallites. We measured the temperature dependence of photoluminescence (PL) spectra to investigate radiative and nonradiative recombination processes in the nanocrystallites prepared using this method. The Si nanocrystallites showed visible PL bands in the red (1.6 eV) and green (2.1 eV) spectral regions. The intensities of the red and green PL increased with decreasing temperature and then saturated below 80 K. This temperature dependence was compared with that of other photoluminescent Si materials. It was shown that the PL quantum efficiency of the Si nanocrystallites was larger than that of a-Si:H at high temperatures. One of the reasons for the difference in the temperature dependence between the Si nanocrystallite and a-Si:H is the change in the role of defects in the nonradiative recombination process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 219
Copyright
Copyright © Materials Research Society 1998

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