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Temperature Dependent C-V Characteristics of YBCO/YSZ/Si MIS Capacitors

Published online by Cambridge University Press:  26 February 2011

Jianmin Qiao ,
Eric M. Ajimine ,
Paresh P. Patel ,
Marco A. Segovia ,
Cary Y. Yang ,
David K. Fork ,
Fernando A. Ponce  and
Joseph C. Tramontana
Jianmin Qiao
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Eric M. Ajimine
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Paresh P. Patel
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Marco A. Segovia
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Cary Y. Yang
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
David K. Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Fernando A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Joseph C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Metal-insulator-semiconductor capacitors are fabricated from a YBa2Cu3O7-δ (YBCOVYttria-Stabilized Zirconia(YSZ)/Si structure. Current-voltage(I-V) measurements reveal that thicker YBCO films(≤150Å) tend to result in more stable capacitors. Results of capacitance-voltage(C-V) measurements during bias-temperature cycling suggest the presence of a thermally activated process in the YSZ and/or YSZ/Si interface. This process is probably related to trapping/detrapping mechanisms in the SiOx, layer formed between YSZ and Si. It is shown that the distribution of mobile ions in YSZ can be “set” with biases at room temperature and then “frozen” by lowering the temperature, giving rise to adjustable threshold voltages at 80K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 583
Copyright
Copyright © Materials Research Society 1992

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References

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