- Cited by 20
Shur, Michael Hack, Michael and Shaw, John G. 1989. A new analytic model for amorphous silicon thin‐film transistors. Journal of Applied Physics, Vol. 66, Issue. 7, p. 3371.
Bae, Byung-Seong Cho, Deok-Ho Lee, Jae-Hee Lee, Choochon and Jang, Jin 1989. Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors. MRS Proceedings, Vol. 149, Issue. ,
Lustig, N. and Howard, W.E. 1989. Variable range hopping conductivity in hydrogenated amorphous silicon thin film transistors. Solid State Communications, Vol. 72, Issue. 1, p. 59.
Lustig, Naftali and Kanicki, Jerzy 1989. Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors. Journal of Applied Physics, Vol. 65, Issue. 10, p. 3951.
Bae, Byung‐Seong and Lee, Choochon 1990. Effect of interface state distribution on field effect conductance activation energy in hydrogenated amorphous silicon thin film transistors. Journal of Applied Physics, Vol. 68, Issue. 7, p. 3439.
Lee, W.-S. Neudeck, G.W. Choi, J. and Luan, S. 1991. A model for the temperature-dependent saturated I/sub D/-V/sub D/ characteristics of an a-Si:H thin-film transistor. IEEE Transactions on Electron Devices, Vol. 38, Issue. 9, p. 2070.
Park, Jin S. Oh, Chang H. Choi, Hong S. Han, Min K. Choi, Yearn I. and Han, Chul H. 1991. Effects of Temperature and Electrical Stress on the Characteristics of Amorphous Silicon Thin-Film Transistors. MRS Proceedings, Vol. 219, Issue. ,
Krimmel, Eberhard F. Hezel, Rudolf Nohl, Uwe and Bohrer, Rainer 1991. Si Silicon. p. 189.
Godet, C. Kanicki, J. and Gelatos, A. V. 1992. Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices. Journal of Applied Physics, Vol. 71, Issue. 10, p. 5022.
Chen, Bor -Yir Wu, Wei -Hsiung Chen, Jiann -Ruey and Hong, Chum -Sam 1995. Temperature dependence of hydrogenated amorphous silicon thin-film transistors. Journal of Materials Science, Vol. 30, Issue. 9, p. 2254.
Chen, Chun-Ying and Kanicki, Jerzy 1996. Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT. MRS Proceedings, Vol. 424, Issue. ,
Ling Wang Fjeldly, T.A. Iniguez, B. Slade, H.C. and Shur, M. 2000. Self-heating and kink effects in a-Si:H thin film transistors. IEEE Transactions on Electron Devices, Vol. 47, Issue. 2, p. 387.
Meijer, E. J. Tanase, C. Blom, P. W. M. van Veenendaal, E. Huisman, B.-H. de Leeuw, D. M. and Klapwijk, T. M. 2002. Switch-on voltage in disordered organic field-effect transistors. Applied Physics Letters, Vol. 80, Issue. 20, p. 3838.
Kim, Joo-Han and Kanicki, Jerzy 2003. 4.4: 200 dpi 3-a-Si:H TFTs Voltage-Driven AM-PLEDs. SID Symposium Digest of Technical Papers, Vol. 34, Issue. 1, p. 18.
Gomes, H. L. Stallinga, P. Dinelli, F. Murgia, M. Biscarini, F. de Leeuw, D. M. Muck, T. Geurts, J. Molenkamp, L. W. and Wagner, V. 2004. Bias-induced threshold voltages shifts in thin-film organic transistors. Applied Physics Letters, Vol. 84, Issue. 16, p. 3184.
Gomes, Henrique L. Stallinga, Peter Dinelli, Franco Murgia, Mauro Biscarini, Fabio de Leeuw, Dago M. Muccini, M. and Müllen, K. 2005. Electrical characterization of organic based transistors: stability issues. Polymers for Advanced Technologies, Vol. 16, Issue. 2-3, p. 227.
Lin, Y.C. Shieh, H.-P.D. and Kanicki, J. 2005. A Novel Current-Scaling a-Si:H TFTs Pixel Electrode Circuit for AM-OLEDs. IEEE Transactions on Electron Devices, Vol. 52, Issue. 6, p. 1123.
Kuo, Alex Won, Tae Kyung and Kanicki, Jerzy 2008. Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs: Electrical Performance and Stability. IEEE Transactions on Electron Devices, Vol. 55, Issue. 7, p. 1621.
Akiyama, Yuto and Mori, Takehiko 2014. Analysing organic transistors based on interface approximation. AIP Advances, Vol. 4, Issue. 1, p. 017126.
Khelfaoui, F and Aida, M S 2017. Films surface temperature calculation during growth by sputtering technique. Journal of Semiconductors, Vol. 38, Issue. 9, p. 096001.
Check if you have access via personal or institutional login
The characteristics of inverted staggered hydrogenated amorphous silicon/silicon nitride (a-Si:H/a-SiNx:H) thin film transistors (TFTs) are reported between 80 K and 420 K. The TFTs are found to have three distinct transport regimes. Between 80 K to approximately 260 K, the transport in the TFT channel is dominated by electrons hopping between localized gap states of a-Si:H and is analyzed using Mott's theory of variable- range hopping. As the tem-perature is increased above ∼260 K the current becomes thermally activated with an activation energy which depends on the gate voltage. The effective field effect mobility, as determined from the TFT characteristics in saturation, is activated in this regime, with an activation energy 0.10 to 0.15 eV. The various activation energies are found to be sensitive to annealing which can be explained by a reduction in deep and shallow states in the a-Si:H active layer. When operated above ∼360 K the TFTs become unstable due to rapid changes in threshold voltage under the applied gate field. The behavior of the threshold voltage is described over the entire temperature range and possible mechanisms are discussed.
Hide All1. Migliorato, P., Proc. of Eurodisplay, p. 44 (1987).2. Weisfield, R.L., Tuan, H.C., Fennell, L. and Thompson, M.J., MRS Symp. Proc. 95, 469 (1987).3. Bohm, M., Salamon, S. and Kiss, Z., Appl. Phys. A 45, 53 (1988).4. Powell, M.J., van Berkel, C., French, I.D. and Nicholls, D.H., Appl. Phys. Lett. 51, 1242 (1987).5. Kanicki, J. and Wagner, P., in Silicon Nitride and Silicon Dioxide Thin Insulating Films, eds. Kapoor, V.J. and Hankins, K.T., Electrochemical Society, 86–10, 261 (1986).6. Jousse, D., Kanicki, J., Kirk, D.T. and Lenahan, P.M., Appl. Phys. Lett. 52, 445 (1988).7. Mackenzie, K.D., Snell, A.J., French, I., LeComber, P.G. and Spear, W.E., Appl. Phys. A 31, 87 (1983).8. Tiedje, T., Cebulka, J.M., Morel, D.L. and Abeles, B., Phys. Rev. Lett. 46, 1425 (1981).9. Mott, N.F. and Davis, E.A. in Electronic Processes in Non-Crystalline Materials, Clarendon Press Oxford (1979).10. Powell, M. J. and Orton, J. W., Appl. Phys. Lett. 45, 171 (1984)11. Shur, M. and Hack, M., J. Appl. Phys. 55, 3831 (1984).12. Powell, M.J., Appl. Phys. Lett. 43, 597 (1983).13. Hepburn, A.R., Marshall, J.M., Main, C., Powell, M. J. and van Berkel, C., Phys. Rev. Lett. 56, 2215 (1986).14. Schropp, R.E.I. and Verwey, J. F., Appl. Phys. Lett. 50, 185 (1987).15. Jackson, W.B. and Moyer, M.D., Phys. Rev. B 36, 6217 (1987).16. Zhang, H. and Matsumura, M., MRS Symp. Proc. 95, 463 (1987).
Email your librarian or administrator to recommend adding this journal to your organisation's collection.
- ISSN: -
- EISSN: 1946-4274
- URL: /core/journals/mrs-online-proceedings-library-archive
* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.
Usage data cannot currently be displayed