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Temperature Dependence of the Thermal Conductivity of Materials for Microelectronic Packaging: Measuring and Modelling Effects of Microstructure and Impurities

Published online by Cambridge University Press:  21 February 2011

Ralph B. Dinwiddie  and
David G. Onn
Ralph B. Dinwiddie
Affiliation:
Metals and Ceramips Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6064
David G. Onn
Affiliation:
Applied Thermal Physics Laboratory, Department of Physics & Astronomy, University of Delaware, Newark, DE 19716
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Abstract

The materials studied in this research, having a wide range of thermal conductivities, permit a study of the mechanisms which affect their behavior. Data on the thermal conductivity of several substrate materials, over a wide temperature range, were analyzed using the Klemens model. Parameters in this model, which include crystallite size and impurity concentration, are determined through a nonlinear least squares fitting routine and related, where possible, to values obtained by other techniques. This analysis predicts an achievable upper limit of 290 W/m.K for very high purity sintered AlN with 5 micron crystallites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 241
Copyright
Copyright © Materials Research Society 1990

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