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Temperature Dependence of the Photoconductivity and the Near Absence of Light-Induced Defects in a-SixGe1-x:H

Published online by Cambridge University Press:  10 February 2011

H. Fritzsche ,
P. Stradins  and
G. Belomoin
H. Fritzsche
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
G. Belomoin
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
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Abstract

The photoconductivities ap of glow discharge deposited a-Ge:H and amorphous Si-Ge alloys prepared in different laboratories were measured between 4.2K and 300K and compared with σp(T) of intrinsic and compensated a-Si:H films. The alloys as well as a-Ge:H do not exhibit thermal quenching of σp(T) at elevated temperatures which suggests that the valence and conduction band tails have similar widths. Remarkable is the near absence of light-induced metastable defects in the alloys as well as in a-Ge:H even after prolonged exposures at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 563
Copyright
Copyright © Materials Research Society 1996

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