Hostname: page-component-84b7d79bbc-g78kv Total loading time: 0 Render date: 2024-07-26T21:58:21.986Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

Published online by Cambridge University Press:  15 February 2011

G. Weidner ,
D. Kröger ,
M. Weidner  and
K. Tittelbach-Helmrich
G. Weidner
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
D. Kröger
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
M. Weidner
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
K. Tittelbach-Helmrich
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
Get access

Abstract

This paper investigates conditions of low thermal budget N2O and NO oxidation with simultaneous accumulation of 0.5 to 1 at% nitrogen at the SiO2/Si interface of thin oxide layers. A nitrogen accumulation model is presented. It is concluded that the nitrogen accumulation should be realized with oxidizing conditions at the interface to silicon and it is proposed to control the NO partial pressure in reactor gas for the desired nitrogen amount at tolerable thermal budget.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 265
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Momose, H. S., Morimoto, T.,Ozawa, Y., Tsuchiaki, M., Ono, M., Yamabe, K., Iwai, H., IEDM, 359 (1991)Google Scholar
[2] Hori, T., SSDM Ext. Abst., 197 (1989)Google Scholar
[3] Hwang, H., Ting, W., Maiti, B., Kwong, D. L., Lee, J., Appl. Phys. Letters, 57, 1010 (1990)Google Scholar
[4] Fukuda, H., Arakawa, T., Ohno, S., Electron. Letters 26, 1505 (1990)Google Scholar
[5] Dutoit, M., Bouvet, D., Novkovski, N., Letourneau, P., Microelectronics Journal, 25, 539 (1994)Google Scholar
[6] Weidner, G., Krüger, D., Weidner, M., Grabolla, T., presented at the 6th ESPRIT Workshop on Characterisation and Growth of Thin Dielectrics in Microelectronics, Kinsale, Co. Cork, Ireland, 22 – 23 November, 1994 (unpublished)Google Scholar
[7] Weidner, G., Kurps, R., Blum, K., Krüger, D., Microelectronic Engineering 22, 77 (1993)Google Scholar
[8] Chu, T. Y., Ting, W., Ahn, J., Kwong, D. K., J. Electrochem. Soc. 138, L 13 (1991)Google Scholar
[9] Tobin, P. J., Okada, Y., Ajuria, S. A., Lakhotia, V., Feil, W. A., Hedge, R. I., J. Appl. Phys. 75, 1811 (1994)Google Scholar
[10] Geen, M. L., Brasen, D., Evans-Lutterodt, K.-W., Feldman, L. C., Kirsch, K., Lennard, W., Tang, H. T., Manchanda, L., Tang, M.-T., Appl. Phys. Letters 65,848 (1994)Google Scholar
[11] Mi, J., Bouvet, D.,Letourneau, P., Xanthopoulos, N., Mathieu, H. J., Dutoit, M., Dubois, C., Dupuy, J. C., Microelectronic Engineering 22, 81 (1993)Google Scholar