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Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

  • G. Weidner (a1), D. Kröger (a1), M. Weidner (a1) and K. Tittelbach-Helmrich (a1)

Abstract

This paper investigates conditions of low thermal budget N2O and NO oxidation with simultaneous accumulation of 0.5 to 1 at% nitrogen at the SiO2/Si interface of thin oxide layers. A nitrogen accumulation model is presented. It is concluded that the nitrogen accumulation should be realized with oxidizing conditions at the interface to silicon and it is proposed to control the NO partial pressure in reactor gas for the desired nitrogen amount at tolerable thermal budget.

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Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

  • G. Weidner (a1), D. Kröger (a1), M. Weidner (a1) and K. Tittelbach-Helmrich (a1)

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