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Temperature Dependence of Ion Mixing Of Markers in Zr

Published online by Cambridge University Press:  28 February 2011

S. -J. Kim ,
M. -A. Nicolet  and
R. S. Averback
S. -J. Kim
Affiliation:
California Institute of Technology, Department of Electrical Engineering, Pasadena, CA 91125
M. -A. Nicolet
Affiliation:
California Institute of Technology, Department of Electrical Engineering, Pasadena, CA 91125
R. S. Averback
Affiliation:
Argonne National Laboratory, Material Science Division, Argonne, IL 60439 Department of Materials Science, University of Illinois Urbana-Champaign, Urbana, IL 61801
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Abstract

Ion mixing of thin markers in Zr was investigated by irradiating with 660 keV Kr++ ions at temperatures between 300 to 423 K. Very thin films of vacuum evaporated Ti, Cr, Fe, Co, Ni, Cu+ Hf, W, and Au served as markers. The samples were analyzed by 2 MeV He backscattering spectrometry. The marker elements that are likely to dissolve interstitially in Zr have higher mixing efficiencies at elevated irradiation temperature than the markers that are likely to dissolve substitutionally. The results are explained by radiation-enhanced diffusion theory.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 437
Copyright
Copyright © Materials Research Society 1987

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