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Temperature Dependence of High-Mobility Poly-Si Tft with Single Grain Boundary

  • In-Hyuk Song (a1), Cheon-Hong Kim (a1) and Min-Koo Han (a1)

Abstract

We have fabricated high-mobility TFTs with large lateral grains and investigated the variation of drain current with increasing temperature. The activation energy of drain current in large grain TFTs is found to be higher under the off-state and lower under the on-state than that in small grain TFTs. The field-effect mobility during the on-state is reduced with increasing temperature due to a lattice scattering inside grain. Because the proposed device has large lateral grain in the channel region, the lattice scattering inside the grain would be dominant, which is similar to single crystal Si MOSFETs.

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Temperature Dependence of High-Mobility Poly-Si Tft with Single Grain Boundary

  • In-Hyuk Song (a1), Cheon-Hong Kim (a1) and Min-Koo Han (a1)

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