Skip to main content Accessibility help
×
Home

Temperature Dependence of Damage in Boron-Implanted Silicon

  • G. Ottaviani (a1), F. Nava (a1), R. Tonini (a1), S. Frabboni (a1), G. F. Cerofolini (a2) and P. Cantoni (a3)...

Abstract

We have performed a systematic investigation of boron implantation at 30 keV into <100> n-type silicon in the 77 –300 K temperature range and mostly at 9×1015 cm−2 fluence. The analyses have been performed with ion channeling and cross sectional transmission electron microscopy both in as-implanted samples and in samples annealed in vacuum furnace at 500 °C and 850 °C for 30 min. We confirm the impossibility of amorphization at room temperature and the presence of residual damage mainly located at the boron projected range. On the contrary, a continuous amorphous layer can be obtained for implants at 77 K and 193 K; the thickness of the implanted layer is increased by lowering the temperature, at the same time the amorphous-crystalline interface becomes sharper. Sheet resistance measurements performed after isochronal annealing shows an apparent reverse annealing of the dopant only in the sample implanted at 273 K. The striking differences between light and heavy ions observed at room temperature implantation disappears at 77 K and full recovery with no residual damage of the amorphous layer is observed.

Copyright

References

Hide All
1. Morehead, F.F. Jr. and Crowder, B.L., Radiat. Eff. 6, 27 (1970).
2. Armigliato, A., Nobili, D., Ostoja, P., Servidori, M. and Solmi, S., in Semiconductor Silicon 1977 (The Electrochem. Soc. Inc., Princeton, NJ 1977) p.638.
3. Michel, A.E., Kastl, R.H., Mader, S.R., Masters, B.J. and Gardner, J.A., Appl. Phys. Lett., 44, 404 (1984).
4. Davies, D.E., Appl. Phys. Lett., 14, 227 (1969).
5. Hart, R.R. and Marsh, O.J., Appl. Phys. Lett., 15, 206 (1969).
6. Huang, J., Fan, D. and Jaccodine, R.J., J. Appl. Phys., 63, 5521 (1988).
7. Chu, W.K., Mayer, J.W. and Nicolet, M.A., Backscattering Spectrometry, (Academic Press, New York, 1978).
8. Williams, J.S., Elliman, R.G., Brown, W.L. and Seidel, T.E., Phys. Rew. Lett., 55, 1482 (1985).
9. Cerofolini, G.F., Meda, L. and Volpones, C., J. Appl. Phys., 63, 4911 (1988).
10. Landi, E., Guimaraes, S. and Solmi, S., Appl. Phys.,A 44, 135 (1987).

Temperature Dependence of Damage in Boron-Implanted Silicon

  • G. Ottaviani (a1), F. Nava (a1), R. Tonini (a1), S. Frabboni (a1), G. F. Cerofolini (a2) and P. Cantoni (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed