Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T10:41:18.100Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of Biaxial Modulus and Thermal Expansion Coefficient of Thin Films Using Wafer Curvature Method

Published online by Cambridge University Press:  01 February 2011

M. Capanu ,
A. Cervin-Lawry ,
A. Patel ,
I. Koutsaroff ,
P. Woo ,
Lynda Wu ,
J. Oh ,
J. Obeng  and
B. McClelland
M. Capanu
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
A. Cervin-Lawry
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
A. Patel
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
I. Koutsaroff
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
P. Woo
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
Lynda Wu
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
J. Oh
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
J. Obeng
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
B. McClelland
Affiliation:
Technology R&D, Gennum Corporation, P.O. Box 489, Station A, Burlington, Ontario, L7R 3Y3, Canada.
Get access

Abstract

The present work uses wafer curvature (disk) method to measure the temperature variation of the biaxial modulus and the thermal expansion coefficient TEC from 25°C to 205°C. The following thin films were measured: PolySi, low stress LPCVD SixNy and (Ba0.7, Sr0.3)TiO3 (BST). To improve the precision, perfect circular thin wafers were used: 4 inches circular 280μm thick <111>Si and 450μm thick Fused Silica. The measurements were performed using a commercial Tencor FLX2320 Stress Measurement System. The film thickness was measured with Tencor TF1 thin film optical system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U11.29
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stoney, G.G., in Proc. Royal Soc. London, A82, 172 (1909)Google Scholar
2. Retajczyk, T.F., Sinha, A.K., in Appl. Phys. Lett., 36 (2 ), 161 (1980).Google Scholar
3. Lima, , Lacerda, R.G., Vilcarromero, J., Marques, F.C., in J. Appl. Phys, 86 (9), 4936 (1999).Google Scholar
4. Zhao, J.H., Du, Y., Morgen, M., Ho, P.S., in J. Appl. Phys, 87 (3), 1575 (2000).Google Scholar
5. Miyazaki, N., Uchida, H., Munakata, T., Fujiuoka, K., Sugino, Y., in J. of Crystal Growth 125, 102 (1992).Google Scholar
6. Brantley, W.A., in J. Appl.Phys., 44 (1), 534 (1973).Google Scholar
7. Okada, Y. and Tokumaru, Y., in J. Appl. Phys., 56 (2), 314 (1984).Google Scholar
8. McSkimin, H.J., in J. of the Acoustical Soc. of Amer., 31 (3), 287 (1959).Google Scholar
9. Fukuhara, M., Sanpei, A., Shibuki, K., in J. Mat. Sci., 32,, 1207 (1997).Google Scholar
10. Berthold, J.W., Jacobs, S.F., in Appl. Optics, 15 (10), 2344 (1976).Google Scholar
11. Mazurin, M.V., Streltsina, M.V., eds, in Handbook of glass data, (Elsevier, 1983) pp. 31–43.Google Scholar
12. Sharpe, W.N., Eby, M.A., Coles, G., in Transducers 01 EUROSENSORS XV, The 11th Int. Conf. On Solid-State Sensors and Actuators, Munich, Germany, June 10–14, 2001.Google Scholar
13. Kiesewetter, L., Zhang, J.M., Houdeau, D. and Steckenborn, A., in Sensors and Actuators, A35 (2), 153–159 (1992).Google Scholar
14. Madou, M. ed., in Fundamental of Microfabrication, (CRC Press 1997) pp. 261.Google Scholar
15. Taylor, T.R., Hansen, P.J., Acikel, B., Pervez, N., York, R.A., Streiffer, S.K., Speck, J.S., in Appl. Phys. Letters, 80 (11), 1978–1980 (2002).Google Scholar
16. Horwitz, J.S., Chang, W., Kim, W.J., Qadri, S.B., Pond, J.M., Kirchoefer, S.W., Chrisey, D.B., in J. of Electroceramics, 4(2/3), 357–363 (2000).Google Scholar