Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T19:59:32.842Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of 1/f Noise and Electrical Conductivity Measurements on p-type a-Si:H Devices

Published online by Cambridge University Press:  17 June 2013

V. C. Lopes ,
E. Hanson ,
D. Whitfield ,
K. Shrestha ,
C. L. Littler  and
A. J. Syllaios
V. C. Lopes
Affiliation:
University of North Texas, 1155 Union Circle #311427, Denton, TX 76203-5017
E. Hanson
Affiliation:
University of North Texas, 1155 Union Circle #311427, Denton, TX 76203-5017
D. Whitfield
Affiliation:
University of North Texas, 1155 Union Circle #311427, Denton, TX 76203-5017
K. Shrestha
Affiliation:
University of North Texas, 1155 Union Circle #311427, Denton, TX 76203-5017
C. L. Littler
Affiliation:
University of North Texas, 1155 Union Circle #311427, Denton, TX 76203-5017
A. J. Syllaios
Affiliation:
University of North Texas, 1155 Union Circle #311427, Denton, TX 76203-5017
Get access

Abstract

Noise and electrical conductivity measurements were made at temperatures ranging from approximately 270°K to 320°K on devices fabricated on as grown Boron doped p-type a-Si:H films. The room temperature 1/f noise was found to be proportional to the bias voltage and inversely proportional to the square root of the device area. As a result, the 1/f noise can be described by Hooge’s empirical expression [1]. The 1/f noise was found to be independent of temperature in the range investigated even though the device conductivity changed by a factor of approximately 4 over this range. Conductivity temperature measurements exhibit a T-0.25 dependence, indicative of conduction via localized states in the valence band tail [2,3]. In addition, multiple authors have analyzed hole mobility in a-Si:H and find that the hole mobility depends on the scattering of mobile holes by localized states in the valence band tail [4-7]. We conclude that the a-Si:H carrier concentration does not change appreciably with temperature, and thus, the resistance change in this temperature range is due to the temperature dependence of the hole mobility. Our results are applicable to a basic understanding of noise and conductivity requirements for a-Si:H materials used for microbolometer ambient temperature infrared detection.

Keywords

Sielectrical propertiesamorphous
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 181 - 186
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Hooge, F. N., IEEE Trans Elect Dev 41, 1926 (1994).CrossRefGoogle Scholar
Lewis, A., Phys. Rev. Lett. 29, 1555 (1972).CrossRefGoogle Scholar
Savvides, N., J. Appl. Phys. 56, 2788 (1984).CrossRefGoogle Scholar
Tiedje, T., Cebulka, J. M., Morel, D. L., and Abeles, B., Phys. Rev. Lett. 46, 1425 (1981).CrossRefGoogle Scholar
Dinca, S., Ganguly, G., Lu, Z., Schiff, E. A., Vlahos, V., Wronski, C. R., and Yuan, Q., Mat. Res. Soc. Symp. Proc. 762, A7.1.1 (2003).Google Scholar
Brinza, M. and Adriaenssens, G. J., J. Optoelectronics and Advanced Materials 7, 73 (2005).Google Scholar
Schiff, E. A., Mat. Res. Soc. Symp. Proc. 1153, 1153–A15-01 (2009).CrossRefGoogle Scholar
Ajmera, S. K., Syllaios, A.J., Tyber, Gregory S., Taylor, Michael F., and Hollingsworth, Russell E., Proc. SPIE 7660, 766012–1 (2010).CrossRefGoogle Scholar
Saint John, D. B., Shin, H.-B., Lee, M.-Y., Ajmera, S. K., Syllaios, A. J., Dickey, E. C., Jackson, T. N., and Podraza, N. J., J. Appl. Phys. 110, 033714 (2011).CrossRefGoogle Scholar
Verleg, P. A. W. E. and Dijkhuis, J. I., J. Non-Cryst. Solids 266–269, 232 (2000).CrossRefGoogle Scholar
Shklovskii, B. I., Phys. Rev. B 67, 045201 (2003).CrossRefGoogle Scholar
Kozub, V. I., Baranovskii, S. D., and Shimak, I., Solid State Commun. 113 587 (2000).CrossRefGoogle Scholar
Kim, K. and Johanson, R. E.., IEEE CCECE/CCGEI, Saskatoon, 2261 (2005).Google Scholar
Rhayem, J., Rigaud, D., Valenza, M., Szydlo, N., and Lebrun, H.., Solid-State Electronics 43, 713 (1999).CrossRefGoogle Scholar