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Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

Published online by Cambridge University Press:  25 February 2011

A. Vila ,
A. Cornet ,
J.R. Morante  and
D.I. Westwood
A. Vila
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal, 645. 08028 Barcelona., Spain
A. Cornet
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal, 645. 08028 Barcelona., Spain
J.R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal, 645. 08028 Barcelona., Spain
D.I. Westwood
Affiliation:
Univ. of Wales, College of Cardiff, Dept. of Physics and Astronomy. Cardiff., U.K.
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Abstract

A Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 503
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

/1/ Westwood, D.I., Woolf, D.A., Williams, R.H., J. Cryst. Growth, 98, 782 (1989).Google Scholar
/2/ Masies, J., Rochette, J.F., Etienne, P., Delescluse, P., Huber, A.M., Chevrier, J., J. Cryst. Growth, 64, 101 (1983)Google Scholar
/3/ Peiré, F., Cornet, A., Herms, A., Morante, J.R., Georgakilas, A., Halkias, G., Mat. Res. Proc. Soc. vol 240 (1992).Google Scholar
/4/ Woolf, D.A., Westwood, D.I., Williams, R.H., J. Cryst. Growth 100, 635 (1990).Google Scholar
/5/ Matthews, J.M., Blakeslee, A.E., J. Cryst. Growth, 27, 118 (1974).Google Scholar
/6/ Fang, S.F., Adomi, K., Iyer, S., Morkog, H., Zabel, H., J. Appl. Phys., 68, R31 (1990)Google Scholar
/7/ Fisher, R., Neuman, D., Zabel, H., Morkoç, H., Choi, C., Otsuka, N., Appl. Phys. Lett., 48, 1223 (1986).Google Scholar
/8/ Georgakilas, A., Stoemenos, J., Berge, C., Michelakis, C., Cason, C., Lagadas, C., Hatzopoulos, Z., Christou, A., Inst. of Phys. Conf. Ser., 112, 135 (1990).Google Scholar
/9/ Georgakilas, A., Dimoulas, A., Konstantinidis, G., Tsagaraki, K., Stoemenos, J., Iliadis, A.A., Christou, A., Proceedings of the 3rd European Conference on Crystal Growth (ECCG-3). Budapest (1991).Google Scholar
/10/ Pirouz, P., Ernst, F., Cheng, T.T., Proceedings of Mat. Res. Symp., 116, 57 (1988).Google Scholar