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Tem Study of Stacking Faults Formed in Pairs in a ZnSe Epitaxial Layer on a GaAs(00l) Buffer Layer

Published online by Cambridge University Press:  21 February 2011

J. Tanimura ,
O. Wada ,
Y. Endoh ,
M. Imaizumi  and
T. Ogama
J. Tanimura
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1, Tsukaguchi-Honmachi 8-Chome, Amagasaki, Hyogo 661, Japan
O. Wada
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1, Tsukaguchi-Honmachi 8-Chome, Amagasaki, Hyogo 661, Japan
Y. Endoh
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1, Tsukaguchi-Honmachi 8-Chome, Amagasaki, Hyogo 661, Japan
M. Imaizumi
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1, Tsukaguchi-Honmachi 8-Chome, Amagasaki, Hyogo 661, Japan
T. Ogama
Affiliation:
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1, Tsukaguchi-Honmachi 8-Chome, Amagasaki, Hyogo 661, Japan
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Abstract

Structure of stacking faults in a ZnSe epitaxial layer grown on a GaAs(001) buffer layer was determined with transmission electron microscopy. Two stacking faults were formed in pairs on (111) and (111) planes with the same polarity and met at a point which is a few atomic layers away from the interface between ZnSe and GaAs. Partial dislocations were found to be the Shockley type ones with a Burgers vector of 1/6<211>. Atomic force microscopy showed that hillocks were formed in pairs at a surface where the pair of stacking faults existed in the layer. Moreover, it was observed that the pair of stacking faults elongated along the <110> direction by gliding on the {111} faulted planes under annealing at 200°C for 30min. Formation mechanisms of the pair of stacking faults have been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 485
Copyright
Copyright © Materials Research Society 1996

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References

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