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TEM Study of MOCVD Grown InSb/GaAs Heterostructures with and without TMIn Predeposited Layers

Published online by Cambridge University Press:  22 February 2011

L. H. Kuo ,
Susan Z. Hua ,
L. Salamanca-Riba ,
D. L. Partin ,
L. Green  and
J. Heremans
L. H. Kuo
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742–2115
Susan Z. Hua
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742–2115
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742–2115
D. L. Partin
Affiliation:
Physics Department, General Motors Research and Development Center, Warren, MI 48090–9055
L. Green
Affiliation:
Physics Department, General Motors Research and Development Center, Warren, MI 48090–9055
J. Heremans
Affiliation:
Physics Department, General Motors Research and Development Center, Warren, MI 48090–9055
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Abstract

High quality InSb epilayers were grown on GaAs substrates by metal organic chemical vapor deposition using a two-step growth procedure involving trimethal indium (TMIn) predeposition. From transmission electron microscopy studies, we found that an interdiffusion layer of thickness of 10 Å forms at the interface when the substrate is exposed to TMIn for approximately 6 secs prior to the growth of the InSb filns. Hall mobilities up to σ 52,000 cm2/V-s were obtained at 300 K on a 2.1-μm-thick InSb heteroepitaxial film. In contrast, samples without TMIn predeposition showed polycrystallinity of the InSb films grown on single crystalline GaAs substrates. The effect. of TMNIn predeposition is to minimize the misorientation of the grains, suppress the polycrystallinity, decrease the density of threading dislocations, and increase the electron mobilities in the films. However, we found that too much TMIn predeposition gives rise t.o an intermixing layer at the InSb/GaAs interface which deteriorates the film quality. Details of the effect of the TMIn predeposition on the microstructure of InSb/GaAs with different predeposition times (zero, 6, and 12 secs) are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 405
Copyright
Copyright © Materials Research Society 1994

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References

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