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Tem Study of GaSb/InAs Strained Layer Supeplattices

Published online by Cambridge University Press:  26 February 2011

B. C. De Cooman ,
C. B. Carter ,
G. W. Wicks  and
T. Tanoue
B. C. De Cooman
Affiliation:
Dept. of Materials Science and Engineering, Cornell University
C. B. Carter
Affiliation:
Dept. of Materials Science and Engineering, Cornell University
G. W. Wicks
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
T. Tanoue
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Extract

Cross-sectional TEM of GaSb/InAs superlattices grown by MBE on (100) GaAs and (100) GaSb substrates shows an unusual defect structure within the strained layers. Dislocations are present within the layers and at the interface. High-resolution TEM analysis of the structure of the InAs layers suggests that these layers grow by an island mechanism. A crystal structure different from the zinc blende, is found to be present within the GaSb layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 239
Copyright
Copyright © Materials Research Society 1985

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References

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