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TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization

Published online by Cambridge University Press:  21 February 2011

Chang Woo Lee ,
Yong Tae Kim ,
Suk-Ki Min ,
Choochon Lee ,
Jeong Yong Lee  and
Young Wook Park
Chang Woo Lee
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, 305-701, Taejon, Korea
Yong Tae Kim
Affiliation:
Korea Institute of Science and Technology, Semiconductor Materials Laboratory, P. O. Box 131, Cheongryang, Seoul, Korea
Suk-Ki Min
Affiliation:
Korea Institute of Science and Technology, Semiconductor Materials Laboratory, P. O. Box 131, Cheongryang, Seoul, Korea
Choochon Lee
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, 305-701, Taejon, Korea
Jeong Yong Lee
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 305-701, Taejon, Korea
Young Wook Park
Affiliation:
Samsung Electronics Co., Research and Development Center, Kihung, Korea
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Abstract

Plasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 335
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Saxena, A.N. and Pramanik, D., Solid State Technol., 27, 93 (1984).Google Scholar
2 Pauleau, Y., Solid State Technol., 30, 61 (1987).Google Scholar
3 Wittmer, M., J. Vac. Sci. Technol., A3, 1797 (1985).Google Scholar
4 Gleason, E.F. and Hess, D.W., Mat. Res. Soc. Symp. Proc., 68, 343 (1986).Google Scholar
5 Nakajima, T., Watanabe, K. and Watanabe, N., J. Electrochem. Soc., 134, 3175 (1987).Google Scholar
6 Chang, Woo Lee, Yong, Tae Kim and Suk-Ki, Min, Appl. Phys. Lett., 63, 3312 (1993).Google Scholar
7 Yong, Tae Kim and Suk-Ki, Min, Appl. Phys. Lett., 59, 929 (1991).Google Scholar
8 Yong, Tae Kim, Chang, Woo Lee and Suk-Ki, Min, Appl. Phys. Lett., 61, 537 (1992).Google Scholar
9 Yong, Tae Kim, Suk-Ki, Min and Choong-Ki, Kim, Appl. Phys. Lett., 58, 837 (1991).Google Scholar
10 Yong, Tae Kim, Chang, Woo Lee and Suk-Ki, Min, Jpn. J. Appl. Phys., 32, 196 (1993).Google Scholar