Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T04:46:31.791Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem Studies of GaAs/AlGaAs Heterostructures Grown on Patterned Substrates

Published online by Cambridge University Press:  26 February 2011

D. M. Hwang ,
E. Kapon ,
M. C. Tamargo ,
J. P. Harbison ,
R. Bhat  and
L. Nazar
D. M. Hwang
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
E. Kapon
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
M. C. Tamargo
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
J. P. Harbison
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
R. Bhat
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
L. Nazar
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
Get access

Abstract

Epitaxical growth rates depend strongly on the crystalline orientations of substrate surfaces. Multilayer growth on pre-patterned substrates with various crystal facets exposed results in a large variation of layer thicknesses in the lateral direction. This lateral definition can be used in device applications. Alternating layers of GaAs and AIGaAs were grown by molecular beam epitaxy on (100) GaAs substrates patterned with grooves and ridges along the [01T] and [011] directions by chemical etching. The results were analyzed with transmission electron microscopy using vertical cross-section techniques. Examples of using this method to fabricate ridges with tips of atomic sharpness and quantum-well lasers are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 209
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Tsang, W. T. and Cho, A. Y., Appl. Phys. Lett. 30, 293 (1977).Google Scholar
2.Nagata, S., Tanaka, T., and Fukai, M., Appl. Phys. Lett. 30, 503 (1977).Google Scholar
3.Wu, Y. H., Werner, M., Chen, K. L., and Wang, S., Appl. Phys. Lett. 44, 834 (1984).Google Scholar
4.Smith, J. S., Derry, P. L., Margalit, S., and Yariv, A., Appl. Phys. Lett. 47, 712 (1985).Google Scholar
5.Hersee, S. D., Barbier, E., and Blondeau, R., J. Cryst. Growth 77, 310 (1986).Google Scholar
6.Kapon, E., Tamargo, M. C., and Hwang, D. M., Appl. Phys. Lett. 50, 347 (1987).Google Scholar
7.Hwang, D. M., Kapon, E., Tamargo, M. C., and Bhat, R., in Materials Research Society Symposia Proceedings Vol.77: Interfaces, Superlattices, and Thin Films, edited by Dow, J. D. and Schuller, I. K. (MRS, Pittsburghi1987, p. 773.Google Scholar
8.Kapon, E., Hwang, D. M., Bhat, R., and Tamargo, M. C., to be published in Journal of Superlattices and Microstructures.Google Scholar
9.Kapon, E., Harbison, J. P., Yun, C. P., and Stoffel, N. G., submitted to Appl. Phys. Lett.Google Scholar
10.Sheng, T. T. and Marcus, R. B., J. Electrochem. Soc. 127, 737 (1980).Google Scholar