Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T01:41:32.522Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem Investigation of the Microstructure in Laser-Crystallized Ge Films

Published online by Cambridge University Press:  15 February 2011

Ronald P. Gale ,
John C. C. Fan ,
Ralph L. Chapman  and
Herbert J. Zeiger
Ronald P. Gale
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
Ralph L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
Herbert J. Zeiger
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
Get access

Abstract

The crystallite morphology and defect structure of laser-crystallized Ge films have been characterized by transmission (TEM) and scanning (SEM) electron microscopy. The elongated crystallites present in these films have their long axis in the [001] direction. In regions where these crystallites are well aligned with each other, competitive lateral growth and (110) texture are observed. The defects most frequently found are [111] microtwins. A growth model that accounts for the texture and defects is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 439
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fan, J. C. C., Zeiger, H. J., Gale, R. P., and Chapman, R. L., Appl. Phys. Lett. 36, 158 (1980).CrossRefGoogle Scholar
2. Zeiger, H. J., Fan, J. C. C., Palm, B. J., Gale, R. P., and Chapman, R. L., in Laser and Electron Beam Processing of Materials, eds. White, C. W. and Peercy, P. S. (Academic Press, New York, 1980), pp. 234–240.Google Scholar
3. Chapman, R. L., Fan, J. C. C., Zeiger, H. J., and Gale, R. P., Appl. Phys. Lett. 37, 292 (1980).Google Scholar
4. Gilmer, G. H. and Leamy, H. J. in Ref. 2, pp. 227–233.Google Scholar
5. Gold, R. B., Gibbons, J. F., Magee, T. J., Peng, J., Ormond, R., Deline, V. R., and Evans, C. A. Jr., ibid., pp. 221–226.Google Scholar