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Tem Investigation of the Microstructure in Laser-Crystallized Ge Films

  • Ronald P. Gale (a1), John C. C. Fan (a1), Ralph L. Chapman (a1) and Herbert J. Zeiger (a1)

Abstract

The crystallite morphology and defect structure of laser-crystallized Ge films have been characterized by transmission (TEM) and scanning (SEM) electron microscopy. The elongated crystallites present in these films have their long axis in the [001] direction. In regions where these crystallites are well aligned with each other, competitive lateral growth and (110) texture are observed. The defects most frequently found are [111] microtwins. A growth model that accounts for the texture and defects is proposed.

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1. Fan, J. C. C., Zeiger, H. J., Gale, R. P., and Chapman, R. L., Appl. Phys. Lett. 36, 158 (1980).
2. Zeiger, H. J., Fan, J. C. C., Palm, B. J., Gale, R. P., and Chapman, R. L., in Laser and Electron Beam Processing of Materials, eds. White, C. W. and Peercy, P. S. (Academic Press, New York, 1980), pp. 234240.
3. Chapman, R. L., Fan, J. C. C., Zeiger, H. J., and Gale, R. P., Appl. Phys. Lett. 37, 292 (1980).
4. Gilmer, G. H. and Leamy, H. J. in Ref. 2, pp. 227233.
5. Gold, R. B., Gibbons, J. F., Magee, T. J., Peng, J., Ormond, R., Deline, V. R., and Evans, C. A. Jr., ibid., pp. 221226.

Tem Investigation of the Microstructure in Laser-Crystallized Ge Films

  • Ronald P. Gale (a1), John C. C. Fan (a1), Ralph L. Chapman (a1) and Herbert J. Zeiger (a1)

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