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Tem and Sem Studies of Defects in Gainas and Gainasp Epitaxial-Layer Device-Type Structures

  • M.M. Al-Jassim (a1), M. Hockly (a1) and G.R. Booker (a1)

Abstract

TEM and SEM studies have been carried out on a series of GaAs/GaInAs, InP/GaInAs and InP/GaInAsP device-type structures grown either by vapour phase epitaxy (VPE) or liquid phase epitaxy (LPE). By using the TEM high voltage electron microscope operating at 1000kV, a determination was made of the nature, origin and three-dimensional distribution of structural defects in these specimens (mainly dislocations and stacking faults). SEM EBIC and CL examinations were also performed to study the electrical and luminescent properties of these layers. The ultimate aim is to correlate structural information with electrical and luminescent properties, and with device performance.

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References

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1. Hockly, M., Al-Jassim, M.M. and Booker, G.R., J. Microscopy 118, 117 (1980).
2. Fletcher, J. et al. , Inst.Phys.Conf.Ser. No. 52 (1980) pp. 153–6.

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