Hostname: page-component-7bb8b95d7b-lvwk9 Total loading time: 0 Render date: 2024-09-11T22:50:33.405Z Has data issue: false hasContentIssue false
  • English
  • Français

Techniques for Localization of IC Interconnection Defects

Published online by Cambridge University Press:  01 February 2011

Edward I. Cole Jr
Edward I. Cole Jr*
Affiliation:
Failure Analysis Department Sandia National Laboratories Albuquerque, NM 87185
Get access

Abstract

The advances in integrated circuit technology has made failure site localization extremely challenging. Charge-Induced Voltage Alteration (CIVA), Low Energy CIVA (LECIVA), Light-Induced Voltage Alteration (LIVA), Seebeck Effect Imaging (SEI) and Thermally-Induced Voltage Alteration (TIVA) are five recently developed failure analysis techniques which meet the challenge by rapidly and non-destructively localizing interconnection defects on ICs. The techniques take advantage of voltage fluctuations in a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA are scanning electron microscopy (SEM) techniques that yield rapid localization of open interconnections. LIVA is a scanning optical microscopy (SOM) method that yields quick identification of damaged semiconductor junctions and determines transistor logic states. SEI and TIVA are SOM techniques that rapidly localize open interconnections and shorts respectively. LIVA, SEI, and TIVA can be performed from the backside of ICs by using the proper photon wavelength. CIVA, LECIVA, LIVA, TIVA, and SEI techniques in terms of the physics of signal generation, data acquisition system required, and imaging results displaying the utility of each technique for localizing interconnection defects. In addition to the techniques listed above, the Resistive Contrast Imaging (RCI) for localizing opens on metal test patterns will be described as a starting point for the “IVA” technologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B13.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cole, E.I. Jr, Proc. Sixth IEEE VLSI Multilevel Interconnection Conf., 1989 176.Google Scholar
2. Cole, E.I. Jr and Anderson, R.E., IRPS. (1992) 288–298.Google Scholar
3. Cole, E.I. Jr, Bagnell, C.R. Jr, Davies, B.G., Neacsu, A.M.. Oxford, W.V., Propst, R.H., Scanning Microscopy, vol. 2, no. 1, (1988) 133–150.Google Scholar
4. Wills, K.S., Lewis, T., Billus, G., Hoang, H., ISTFA, (1990) 21–26.Google Scholar
5. Cole, E.I. Jr, Soden, J.M., Rife, J.L., Barton, D.L., and Henderson, C.L.. IRPS. (1994) 388–398.Google Scholar
6. Falk, R.A., ISTFA (2001) 59–65.Google Scholar
7. Palaniappan, M., Chin, J.M., Davis, B., Bruce, M., Wilcox, J., Chua, C.M., Koh, L.S., Ng, H.Y., Tan, S.H., Phang, J.C.H., Gilfeather, G. ISTFA (2001) 171–177.Google Scholar
8. Cole, E.I. Jr et al., Proc. Int. Symp. Testing and Failure Anal., (1994) 23.Google Scholar
9. Reimer, L., Image Formation in Low-Voltage Scanning Electron Microscopy, SPIE Optical Engineering Press, Bellingham, (1993).Google Scholar
10. Kanaya, K. and Ono, S., Electron Beam Interactions with Solids, Scanning Electron Microscopy, AMF O'Hare, (1984) 69.Google Scholar
11. Gorlich, S. and Kubalek, E., Scanning Electron Microscopy, (1985) 87.Google Scholar
12. Cole, E. I. Jr, Tangyunyong, P., and Barton, D.L.. IRPS. (1998) 129–136.Google Scholar
13.http://www.seebeck.com/seebeff.html. 1/7/98.Google Scholar
14. Ashcroft, N.W. and Mermin, N.D.. Solid state physics. Saunders College, Philadelphia, (1976), pp 24–25.Google Scholar
15. Koyama, T., Mashiko, Y., Sekine, M., Koyama, H., and Horie, K.. IRPS. (1995) 228–233.Google Scholar
16. Serway, R.A.. Physics for scientists & engineers with modern physics (2ndedn). Saunders Publishing Co., NY, (1986), pp 605–606.Google Scholar
17. Nikawa, K. and Inoue, S.. ISTFA (1996) 387–392.Google Scholar
18. Nikawa, K. and Inoue, S.. Proc. of Sixth Asian Test Symposium (1997) 219–219.Google Scholar