Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-24T14:24:09.442Z Has data issue: false hasContentIssue false
  • English
  • Français

A Technique For Rapid Thick Film Sic Epitaxial Growth

Published online by Cambridge University Press:  10 February 2011

I. Khlebnikov ,
T. S. Sudarshan ,
V. Madangarli  and
M. A. Capano
I. Khlebnikov
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
T. S. Sudarshan
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
V. Madangarli
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
M. A. Capano
Affiliation:
Wright Laboratory/ Materials Directorate, Wright-Patterson AFB, OH 45433–7707
Get access

Abstract

In this paper we demonstrate the growth of thick SiC epitaxial layers (≥100 μm) of good structural quality at a high growth rate (>100 μm/hr) by controlling the vapor dynamics during conventional physical vapor transport (PVT) process. We propose that our PVT technique be used to ‘repair’ or ‘heal’ commercially available substrates dominated by micropipes, by ‘filling up’ the micropipes through crystal growth inside the micropipe. Extensive experiments performed on thick SiC epitaxial layers grown on Lely substrates indicate that the thick epitaxial layers are of single polytype of high structural quality, with a single peak X-ray rocking curve of less than 12 arcsecs FWHM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 123
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wang, Y. C and Davis, R. F, J. Electronic Materials, 20 (10), 869, (1991).10.1007/BF02665976Google Scholar
2. Kern, W., RCA Rev., 31, pp. 187, (1970).Google Scholar
3. Tairov, Y. M., Tsvekov, V. F., and Khlebnikov, I. I., J. of Crystal Growth, 20, 155, (1973).10.1016/0022-0248(73)90130-9Google Scholar
4. Burton, W. K., Cabrera, N., and Frank, F. C., Philosphical Transactions of the Royal Society of London, Series A. Mathematical and physical sciences, 243, 299, (1951).Google Scholar
5. Khlebnikov, I., Madangarli, V., and Sudarshan, T. S., presented at the 39th EMC, Fort Collins, Colorado, June 1997 (unpublished).Google Scholar