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Tailored Deposition by LPCVD of Non-stoichiometric Si Oxides and their Application in the Formation of Si Nanocrystals Embedded in SiO2 by Thermal Annealing

  • Bruno Morana (a1), Juan Carlos G. de Sande (a2), Andrés Rodríguez (a3), Jesús Sangrador (a4), Tomás Rodríguez (a5), Manuel Avella (a6), Ángel Carmelo Prieto (a7) and Juan Jiménez (a8)...

Abstract

Silicon oxide films with excess of Si were deposited by Low Pressure Chemical Vapor Deposition. The growth rate of the films and the excess of silicon in them have been modeled using a Face-centered Central Composite Design experiment. Samples annealed at 1100°C show luminescence (665 nm) at 80K and at room temperature associated to Si nanocrystals.

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Keywords

Tailored Deposition by LPCVD of Non-stoichiometric Si Oxides and their Application in the Formation of Si Nanocrystals Embedded in SiO2 by Thermal Annealing

  • Bruno Morana (a1), Juan Carlos G. de Sande (a2), Andrés Rodríguez (a3), Jesús Sangrador (a4), Tomás Rodríguez (a5), Manuel Avella (a6), Ángel Carmelo Prieto (a7) and Juan Jiménez (a8)...

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