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A Systematic Study of Metal-assisted Chemical Etching Parameters for Well-Ordered Silicon Nanowire Array Fabrication

  • Arif S. Alagoz (a1) and Tansel Karabacak (a1)

Abstract

Metal-assisted chemical etching is a simple and low-cost silicon nanowire fabrication method which allows control of nanowire diameter, length, shape and orientation. In this work, we fabricated well-ordered silicon nanowire array by patterning gold thin film by nanosphere lithography and etching single crystalline silicon wafer by metal-assisted chemical etching technique. We investigated relation between etched solution concentration and nanowire morphology, wafer crystal orientation, etching rate. This well-ordered silicon nanowires arrays have the potential applications in many fields but especially next generation energy related applications from solar cells to lithium-ion batteries.

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