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Synthesis of Two-Layer TiB2-TiSi2 Structures by Boron Implantation into Titanium Film and Rapid Thermal Annealing

  • V. V. Tokarev (a1), A. I. Demchenko (a1), A. I. Ivanov (a1), V. E. Borisenko (a2) and D. I. Zarovsky (a2)...


Further progress in IC dimension reduction, increase in integration degree and speed require development and use of new current-conducting materials. This is due to the fact that existing current-conducting systems based on aluminium are low temperature, characterized by low electromi gration stability and require use of complex barrier layersi[l]. Polycide currentconducting materials have quite high resistance, interact with aluminium and are sensitive to the formation conditions. From this point of view, borides and titanium borides in particular are very promising for making current-conducting systems since they are very much characterized by good barrier properties, high conductance, properties and electromigration stability [2].



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1. Rosenberg, R., Sullivan, M.J., Howard, J.K., in Thin Films - Interdiffusion and Reactions edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978), p. 39.
2. Shappirio, J., Finnegan, J. et al., J. Vac. Sci. Technol. A3 (6), 2255 (1985).
3. Borisenko, V.E., Gribkovsky, V.V., Labunov, V.A., and Yudin, S.G., Phys. Stat. Sol. (a) 86, 573 (1984).


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