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Synthesis of Two-Layer TiB2-TiSi2 Structures by Boron Implantation into Titanium Film and Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

V. V. Tokarev ,
A. I. Demchenko ,
A. I. Ivanov ,
V. E. Borisenko  and
D. I. Zarovsky
V. V. Tokarev
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P. Browka 17, 220726 Minsk, USSR
A. I. Demchenko
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P. Browka 17, 220726 Minsk, USSR
A. I. Ivanov
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P. Browka 17, 220726 Minsk, USSR
V. E. Borisenko
Affiliation:
Minsk Radioengineering Institute, P. Browka 6, 220600 Minsk, USSR
D. I. Zarovsky
Affiliation:
Minsk Radioengineering Institute, P. Browka 6, 220600 Minsk, USSR
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Extract

Further progress in IC dimension reduction, increase in integration degree and speed require development and use of new current-conducting materials. This is due to the fact that existing current-conducting systems based on aluminium are low temperature, characterized by low electromi gration stability and require use of complex barrier layersi[l]. Polycide currentconducting materials have quite high resistance, interact with aluminium and are sensitive to the formation conditions. From this point of view, borides and titanium borides in particular are very promising for making current-conducting systems since they are very much characterized by good barrier properties, high conductance, properties and electromigration stability [2].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 653
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Rosenberg, R., Sullivan, M.J., Howard, J.K., in Thin Films - Interdiffusion and Reactions edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978), p. 39.Google Scholar
2. Shappirio, J., Finnegan, J. et al., J. Vac. Sci. Technol. A3 (6), 2255 (1985).Google Scholar
3. Borisenko, V.E., Gribkovsky, V.V., Labunov, V.A., and Yudin, S.G., Phys. Stat. Sol. (a) 86, 573 (1984).CrossRefGoogle Scholar