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Synthesis of Si1-xGex-on-Insulator by 74Ge+ Ion Implantation in a Simox Substrate

  • C.J. Patel (a1), C.D. Marsh (a2), U. Magnusson (a3), C. Jeynes (a4), M. Ostling (a5), H NorströM (a3), G.R. Booker (a2) and J.B. Butcher (a1)...


A single crystalline Si1-xGex overlayer on insulator is realised by the implantation of germanium into a SIMOX (Separation by IMplantation of OXygen) substrate. Two SIMOX samples were implanted with 74Ge+ at elevated temperature (≈600°C), and subsequently annealed at different temperatures and anneal ambients. The microstructure, stoichiometry, and conductivity of the Si1-xGex over-layer were studied using transmission electron microscopy, Rutherford backscattering spectrometry/ion channelling and two-probe conductivity measurements. As a result of lattice reordering after final heat treatment, and despite high defect density observed in the XTEM microstructure, the measured conductivity of the over-layer is higher than of the starting SIMOX material. These results suggest a possibility of band-gap engineering by synthesis of Si1-xGex-on-insulator.



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  • EISSN: 1946-4274
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